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学者姓名:李虞锋

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3D ITO-nanowire networks as transparent electrode for all-terrain substrate SCIE
期刊论文 | 2019 , 9 | SCIENTIFIC REPORTS
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Abstract :

A 3D ITO nanowire network with high quality by using polystyrene as an assisted material has been prepared, demonstrating superior optoelectronic performances with a sheet resistance of 193 Omega/sq at 96% transmission. Both remarkable flexibility tested under bending stress and excellent adhesion applied on special terrain substrate have been achieved. This method has led to a full coverage of micro-holes at a depth of 18 mu m and a bottom spacing of only 1 mu m, as well as a perfect gap-free coverage for micro-tubes and pyramid array. It has been proved that this 3D ITO nanowire network can be used as a transparent conductive layer for optoelectronic devices with any topography surface. Through the application on the micro-holes, -tubes and -pyramid array, some new characteristics of the 3D ITO nanowires in solar cells, sensors, micro-lasers and flexible LEDs have been found. Such 3D ITO nanowire networks could be fabricated directly on micro-irregular substrates, which will greatly promote the application of the heterotypic devices.

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GB/T 7714 Li, Qiang , Tian, Zhenhuan , Zhang, Yuantao et al. 3D ITO-nanowire networks as transparent electrode for all-terrain substrate [J]. | SCIENTIFIC REPORTS , 2019 , 9 .
MLA Li, Qiang et al. "3D ITO-nanowire networks as transparent electrode for all-terrain substrate" . | SCIENTIFIC REPORTS 9 (2019) .
APA Li, Qiang , Tian, Zhenhuan , Zhang, Yuantao , Wang, Zuming , Li, Yufeng , Ding, Wen et al. 3D ITO-nanowire networks as transparent electrode for all-terrain substrate . | SCIENTIFIC REPORTS , 2019 , 9 .
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ITO nanowire networks coating on µ-hole arrayed substrate as super-broadband antireflection layer EI Scopus SCIE
期刊论文 | 2018 , 173 , 590-596 | Solar Energy
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Abstract :

We have fabricated the µ-hole array on silicon surface using short-pulse laser, and prepared ITO-nanowire networks via polystyrene spheres. They formed a super-broadband antireflection layer that has gradual refractive index and excellent antireflective properties. The reflectance reached about 15% in the band of 400–2500 nm, and the surface could maintain a strong electrical conductivity. The finite difference time domain method was used to analysis the effect of µ-hole array on the light field, and the antireflection effect of ITO nanowires was calculated. To make use of the light energy in infrared band more effectively, it is a key role to keep a certain hole-spacing. This method will provide a novel and practical model for surface texturing to improve the efficiency of solar cells by using the infrared band light. © 2018 Elsevier Ltd

Keyword :

Anti-reflection effects Antireflective properties Electrical conductivity Indium tin oxide Laser micro-fabrication Polystyrene spheres Short-pulse lasers Surface-texturing

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GB/T 7714 Li, Qiang , Wang, Shuai , Zhang, Minyan et al. ITO nanowire networks coating on µ-hole arrayed substrate as super-broadband antireflection layer [J]. | Solar Energy , 2018 , 173 : 590-596 .
MLA Li, Qiang et al. "ITO nanowire networks coating on µ-hole arrayed substrate as super-broadband antireflection layer" . | Solar Energy 173 (2018) : 590-596 .
APA Li, Qiang , Wang, Shuai , Zhang, Minyan , Feng, Lungang , Su, Xilin , Ding, Wen et al. ITO nanowire networks coating on µ-hole arrayed substrate as super-broadband antireflection layer . | Solar Energy , 2018 , 173 , 590-596 .
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Three-Dimensional Anisotropic Microlaser from GaN-Based Self-Bent-Up Microdisk EI Scopus SCIE
期刊论文 | 2018 , 5 (11) , 4259-4264 | ACS Photonics
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Copyright © 2018 American Chemical Society. Microcavities with whispering gallery modes (WGM), usually formed by two-dimensional (2D) circular structures, are significant elements in integrated optics, quantum information, and topological photonics. We report three-dimensional (3D) WGM from self-bent-up microdisks consisting of strain-released AlGaN/GaN bilayers, which provide an extra degree of freedom of the WGM photons in the vertical dimension, in contrast with the 2D WGM whose field mainly distributes in the horizontal plane. Despite the ultrathin and deformed cavity layer, the 3D WGM shows a reasonably high quality factor for GaN-based microdisks (∼1300) and exhibits single mode lasing due to the anisotropic feature of the bent-up disk, a unique advantage over the conventional planar microdisks of the same material and size. Such devices provide altitude dependence of emitting direction and are promising for applications in multilevel integrated photonics circuits.

Keyword :

microdisk self-bent-up device single mode lasing whispering gallery mode wide bandgap microcavity

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GB/T 7714 Li, Yufeng , Feng, Lungang , Li, Feng et al. Three-Dimensional Anisotropic Microlaser from GaN-Based Self-Bent-Up Microdisk [J]. | ACS Photonics , 2018 , 5 (11) : 4259-4264 .
MLA Li, Yufeng et al. "Three-Dimensional Anisotropic Microlaser from GaN-Based Self-Bent-Up Microdisk" . | ACS Photonics 5 . 11 (2018) : 4259-4264 .
APA Li, Yufeng , Feng, Lungang , Li, Feng , Hu, Peng , Du, Mengqi , Su, Xilin et al. Three-Dimensional Anisotropic Microlaser from GaN-Based Self-Bent-Up Microdisk . | ACS Photonics , 2018 , 5 (11) , 4259-4264 .
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Heavily tin-doped indium oxide nano-pyramids as high-performance gas sensor EI SCIE
期刊论文 | 2018 , 8 (11) | AIP ADVANCES
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Heavily Sn-doped In(2)O(3)nano-pyramids with a Sn percentage of 19.97% by weight have been prepared by sputtering technique. The nano-pyramids with smooth facets and a sharp tip have been achieved by deposition on Sn-metal particles, leading to a diameter of similar to 100nm. The gas sensors realized from these pyramids are highly sensitive to ethanol gas, and the sensitivity is about 133.99 against 200ppm ethanol at 250 degrees C. Good sensitivity characteristics have been obtained even at a low temperature of down to 50 degrees C. The high response and low working temperature demonstrate the potential application of heavily Sn-doped In2O3 nano-pyramids for fabricating gas sensors. (C) 2018 Author(s).

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GB/T 7714 Li, Qiang , Zhang, Yuantao , Wang, Zuming et al. Heavily tin-doped indium oxide nano-pyramids as high-performance gas sensor [J]. | AIP ADVANCES , 2018 , 8 (11) .
MLA Li, Qiang et al. "Heavily tin-doped indium oxide nano-pyramids as high-performance gas sensor" . | AIP ADVANCES 8 . 11 (2018) .
APA Li, Qiang , Zhang, Yuantao , Wang, Zuming , Li, Yufeng , Ding, Wen , Wang, Tao et al. Heavily tin-doped indium oxide nano-pyramids as high-performance gas sensor . | AIP ADVANCES , 2018 , 8 (11) .
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Broadband Emission of Asymmetric Pyramids obtained by Laser Drilling and SAG for Application of Phosphor Free White LEDs CPCI-S
会议论文 | 2018 | 20th International Conference on Electronic Materials and Packaging (EMAP)
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Abstract :

Recent years, white light emitting diodes (LEDs) have been one of the most promising light source in lots of applications, due to its excellent properties, such as high luminous efficacy, low power consumption, and environment-friendliness. However, the commercialized approach, which use blue or UV LEDs to excite some appropriate phosphors, has disadvantages in energy loss and low color rending index. In order to obtain high qulity phosphor free white LEDs, InGaN based micro- and nano-sized structures obtained by Selective Area Growth (SAG) method, is proposed. The quantum well (QWs) thickness and the Indium composition vary with position along the different facets of these structures, resulting in the emission of multiple wavelengths. Even though there is wavelength variation on the different facets, the variation is still not large enough to achieve white LEDs with high color rending index. Thus, we designed an asymmetric pyramid structure to enlarge the wavelength difference. Large Indium segregation and QWs thickness variation occur due to the large growth rate difference during the lateral overgrowth process. Additionally, the asymmetric pyramid can also reduce the dislocation density and improve the material quality by the lateral overgrowth. As a result, a well-designed asymmetric pyramid array is suitable for fabricating high quality white LED.

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GB/T 7714 Tian, Zhenhuan , Li, Qiang , Su, Xilin et al. Broadband Emission of Asymmetric Pyramids obtained by Laser Drilling and SAG for Application of Phosphor Free White LEDs [C] . 2018 .
MLA Tian, Zhenhuan et al. "Broadband Emission of Asymmetric Pyramids obtained by Laser Drilling and SAG for Application of Phosphor Free White LEDs" . (2018) .
APA Tian, Zhenhuan , Li, Qiang , Su, Xilin , Zhang, Ye , Guo, Maofeng , Zhang, Minyan et al. Broadband Emission of Asymmetric Pyramids obtained by Laser Drilling and SAG for Application of Phosphor Free White LEDs . (2018) .
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Super flexible GaN light emitting diodes using microscale pyramid arrays through laser lift-off and dual transfer EI SCIE Scopus
期刊论文 | 2018 , 26 (2) , 1817-1824 | OPTICS EXPRESS
WoS CC Cited Count: 4 SCOPUS Cited Count: 4
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Abstract :

We demonstrated a method to obtain super flexible LEDs, based on high quality pyramid arrays grown directly on sapphire substrates. Laser lift-off (LLO) and dual transfer processes were applied to transfer pyramid arrays face up onto the flexible substrates, which is more efficient than back light emission. Ag grid and Ag nanowires were employed as the electrical connection. No significant performance reduction appeared until the device reached a curvature radius of 0.5 mm. The performance reduction results from cracks appearing at the junction of the Ag grid, which can be improved by replacing the Ag grid with a strip electrode. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.

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GB/T 7714 Tian, Zhenhuan , Li, Yufeng , Su, Xilin et al. Super flexible GaN light emitting diodes using microscale pyramid arrays through laser lift-off and dual transfer [J]. | OPTICS EXPRESS , 2018 , 26 (2) : 1817-1824 .
MLA Tian, Zhenhuan et al. "Super flexible GaN light emitting diodes using microscale pyramid arrays through laser lift-off and dual transfer" . | OPTICS EXPRESS 26 . 2 (2018) : 1817-1824 .
APA Tian, Zhenhuan , Li, Yufeng , Su, Xilin , Feng, Lungang , Wang, Shuai , Ding, Wen et al. Super flexible GaN light emitting diodes using microscale pyramid arrays through laser lift-off and dual transfer . | OPTICS EXPRESS , 2018 , 26 (2) , 1817-1824 .
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Characteristics of GaN-based 500nm light-emitting diodes with embedded hemispherical air-cavity structure EI SCIE Scopus
期刊论文 | 2018 , 123 (12) | JOURNAL OF APPLIED PHYSICS
WoS CC Cited Count: 1 SCOPUS Cited Count: 1
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Abstract :

GaN-based 500 nm light-emitting diodes (LEDs) with an air-cavity formed on a laser-drilled hemispherical patterned sapphire substrate (HPSS) were investigated. The cross-section transmission electron microscopy image of the HPSS-LED epilayer indicated that most of the threading dislocations were bent towards the lateral directions. It was found that in InGaN/GaN multiple quantum wells (MQWs) of HPSS-LEDs, there were fewer V-pits and lower surface roughness than those of conventional LEDs which were grown on flat sapphire substrates (FSSs). The high-resolution x-ray diffraction showed that the LED grown on a HPSS has better crystal quality than that grown on a FSS. Compared to FSS-LEDs, the photoluminescence (PL) intensity, the light output power, and the external quantum efficiency at an injected current of 20mA for the HPSS-LED were enhanced by 81%, 65%, and 62%, respectively, such enhancements can be attributed to better GaN epitaxial quality and higher light extraction. The slightly peak wavelength blueshift of electroluminescence for the HPSS-LED indicated that the quantum confined Stark effect in the InGaN/GaN MQWs has been reduced. Furthermore, it was found that the far-field radiation patterns of the HPSS-LED have smaller view angles than that of the FSS-LED. In addition, the scanning near field optical microscope results revealed that the area above the air-cavity has a larger PL intensity than that without an air-cavity, and the closer to the middle of the air-cavity the stronger the PL intensity. These nano-light distribution findings were in good agreement with the simulation results obtained by the finite difference time domain method. Published by AIP Publishing.

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GB/T 7714 Zhang, Minyan , Li, Yufeng , Li, Qiang et al. Characteristics of GaN-based 500nm light-emitting diodes with embedded hemispherical air-cavity structure [J]. | JOURNAL OF APPLIED PHYSICS , 2018 , 123 (12) .
MLA Zhang, Minyan et al. "Characteristics of GaN-based 500nm light-emitting diodes with embedded hemispherical air-cavity structure" . | JOURNAL OF APPLIED PHYSICS 123 . 12 (2018) .
APA Zhang, Minyan , Li, Yufeng , Li, Qiang , Su, Xilin , Wang, Shuai , Feng, Lungang et al. Characteristics of GaN-based 500nm light-emitting diodes with embedded hemispherical air-cavity structure . | JOURNAL OF APPLIED PHYSICS , 2018 , 123 (12) .
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Mechanism of suppressing efficiency droop by modulating the thickness of quantum barriers in light-emitting diodes EI SCIE Scopus
期刊论文 | 2017 , 56 (6) | JAPANESE JOURNAL OF APPLIED PHYSICS | IF: 1.452
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In this paper, modulating the thickness of quantum barriers (QBs) in gallium nitride (GaN) based light-emitting diodes (LEDs) has been investigated numerically and experimentally. To reveal the underlying mechanism of efficiency droop for LEDs with different QB thicknesses, the dual-wavelength active regions were specially designed. Compare to LEDs with 18-nm-thick QBs and 9-nm-thick QBs, the efficiency droop ratio of the LED with 12-nm-thick QBs is the lowest at the high current density of 80A/cm(2), which indicates that LEDs with medium QB thickness are the best for suppressing efficiency droop. The measured external quantum efficiency (EQE) of the LED with 18-nm-thick QBs is the highest at the low current density of 5A/cm(2), which may result from the lowest leakage current. However, due to the higher hole injection level, the measured EQE results of the LED with 12-nm-thick QBs are higher than the LED with 18-nm-thick QBs at 80A/cm(2). (C) 2017 The Japan Society of Applied Physics

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GB/T 7714 Zhao, Yukun , Yun, Feng , Wang, Shuai et al. Mechanism of suppressing efficiency droop by modulating the thickness of quantum barriers in light-emitting diodes [J]. | JAPANESE JOURNAL OF APPLIED PHYSICS , 2017 , 56 (6) .
MLA Zhao, Yukun et al. "Mechanism of suppressing efficiency droop by modulating the thickness of quantum barriers in light-emitting diodes" . | JAPANESE JOURNAL OF APPLIED PHYSICS 56 . 6 (2017) .
APA Zhao, Yukun , Yun, Feng , Wang, Shuai , Feng, Lungang , Su, Xilin , Li, Yufeng et al. Mechanism of suppressing efficiency droop by modulating the thickness of quantum barriers in light-emitting diodes . | JAPANESE JOURNAL OF APPLIED PHYSICS , 2017 , 56 (6) .
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Improving Peak-Wavelength Method to Measure Junction Temperature by Dual-Wavelength LEDs EI SCIE Scopus
期刊论文 | 2017 , 5 , 11712-11716 | IEEE ACCESS | IF: 3.557
WoS CC Cited Count: 2 SCOPUS Cited Count: 2
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Abstract :

In this paper, the improvement of the method measuring the junction temperature of light-emitting diodes (LEDs) has been studied experimentally. A practical method is proposed with only three measurement procedures. With the consideration of indium (In) composition and blue shift, the method has a high applicability, which is practical for the LED chips vary from blue to green chips under different currents, including the packaged chips. On the other hand, according to the experimental and derived results, the junction-temperature difference and peak-wavelength shift in both blue-shift and red-shift fields show similar parabolic-like relations. To simplify the experimental processes, dual-wavelength LEDs were fabricated and measured instead of conventional single-wavelength LEDs.

Keyword :

dual-wavelength light emitting diodes practicability peak-wavelength method Junction temperature

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GB/T 7714 Zhao, Yukun , Yun, Feng , Feng, Lungang et al. Improving Peak-Wavelength Method to Measure Junction Temperature by Dual-Wavelength LEDs [J]. | IEEE ACCESS , 2017 , 5 : 11712-11716 .
MLA Zhao, Yukun et al. "Improving Peak-Wavelength Method to Measure Junction Temperature by Dual-Wavelength LEDs" . | IEEE ACCESS 5 (2017) : 11712-11716 .
APA Zhao, Yukun , Yun, Feng , Feng, Lungang , Wang, Shuai , Li, Yufeng , Su, Xilin et al. Improving Peak-Wavelength Method to Measure Junction Temperature by Dual-Wavelength LEDs . | IEEE ACCESS , 2017 , 5 , 11712-11716 .
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Efficiency droop suppression of distance-engineered surface plasmon-coupled photoluminescence in GaN-based quantum well LEDs EI SCIE Scopus
期刊论文 | 2017 , 7 (11) | AIP ADVANCES | IF: 1.653
SCOPUS Cited Count: 1
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Ag coated microgroove with extreme large aspect-ratio of 500: 1 was fabricated on p-GaN capping layer to investigate the coupling behavior between quantum wells and surface plasmon in highly spatial resolution. Significant photoluminescence enhancement was observed when the distance between Ag film and QWs was reduced from 220 nm to about 20 nm. A maximum enhancement ratio of 18-fold was achieved at the groove bottom where the surface plasmonic coupling was considered the strongest. Such enhancement ratio was found highly affected by the excitation power density. It also shows high correlation to the internal quantum efficiency as a function of coupling effect and a maximum Purcell Factor of 1.75 was estimated at maximum coupling effect, which matches number calculated independently from the time-resolved photoluminescence measurement. With such Purcell Factor, the efficiency was greatly enhanced and the droop was significantly suppressed. (C) 2017 Author(s).

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GB/T 7714 Li, Yufeng , Wang, Shuai , Su, Xilin et al. Efficiency droop suppression of distance-engineered surface plasmon-coupled photoluminescence in GaN-based quantum well LEDs [J]. | AIP ADVANCES , 2017 , 7 (11) .
MLA Li, Yufeng et al. "Efficiency droop suppression of distance-engineered surface plasmon-coupled photoluminescence in GaN-based quantum well LEDs" . | AIP ADVANCES 7 . 11 (2017) .
APA Li, Yufeng , Wang, Shuai , Su, Xilin , Tang, Weihan , Li, Qiang , Guo, Maofeng et al. Efficiency droop suppression of distance-engineered surface plasmon-coupled photoluminescence in GaN-based quantum well LEDs . | AIP ADVANCES , 2017 , 7 (11) .
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