• Complex
  • Title
  • Author
  • Keyword
  • Abstract
  • Scholars
Search
High Impact Results & Cited Count Trend for Year Keyword Cloud and Partner Relationship

Query:

学者姓名:杨旭

Refining:

Source

Submit Unfold

Co-Author

Submit Unfold

Language

Submit

Clean All

Export Sort by:
Default
  • Default
  • Title
  • Year
  • WOS Cited Count
  • Impact factor
  • Ascending
  • Descending
< Page ,Total 36 >
Comparative Investigation on Paralleling Suitability for SiC MOSFETs and SIC/Si Cascode Devices EI SCIE Scopus
期刊论文 | 2022 , 69 (4) , 3503-3514 | IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
SCOPUS Cited Count: 11
Abstract&Keyword Cite

Abstract :

Silicon carbon (SIC) metal-oxide semiconductor field-effect transistors (MOSFETs) and SiC/Si cascode devices are two popular normally-OFF SiC power devices. In terms of the rated voltage and current of a single chip, there are always some SiC/Si cascode counterparts for the SiC MOSFETs. Thus, the two devices can substitute for each other in many fields. However, it is not clear which of the two SiC power devices is more suitable for parallel operation to deal with high current. This article comparatively investigates the paralleling suitability of SiC MOSFETs and SiC/Si cascode devices by theoretical analysis and experimental verifications for the first time. The paralleling suitability of the two devices is quantitatively evaluated by the unbalanced current among paralleled chips under the conditions with asymmetric layout and uneven junction temperature. Both static and dynamic imbalanced current are taken into consideration. Based on the theoretical and experimental results, some design guidelines are proposed to promote cur rent sharing.

Keyword :

Asymmetric layout current sharing paralleled SiC/Si cascode devices paralleled silicon carbon (SiC) metal-oxide semiconductor field-effect transistors (MOSFETs) unequal junction temperature

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Zhao, Cheng , Wang, Laili , Yang, Xu et al. Comparative Investigation on Paralleling Suitability for SiC MOSFETs and SIC/Si Cascode Devices [J]. | IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS , 2022 , 69 (4) : 3503-3514 .
MLA Zhao, Cheng et al. "Comparative Investigation on Paralleling Suitability for SiC MOSFETs and SIC/Si Cascode Devices" . | IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS 69 . 4 (2022) : 3503-3514 .
APA Zhao, Cheng , Wang, Laili , Yang, Xu , Zhang, Fan , Gan, Yongmei . Comparative Investigation on Paralleling Suitability for SiC MOSFETs and SIC/Si Cascode Devices . | IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS , 2022 , 69 (4) , 3503-3514 .
Export to NoteExpress RIS BibTex
A Low-Cost Novel Structure for Paralleled SiC JFETSi MOSFET Cascodes to Balance Turn-on Current and Junction Temperature EI SCIE Scopus
期刊论文 | 2022 , 37 (12) , 14447-14461 | IEEE TRANSACTIONS ON POWER ELECTRONICS
SCOPUS Cited Count: 2
Abstract&Keyword Cite

Abstract :

SiC JFET/Si MOSFET Cascodes (SSCs) are promising because of their small ON-resistance and fast switching speed. Parallel operation of multiple SSCs is popular for high-current applications. However, the practical layout can hardly be absolutely symmetric. The mismatches from layout will cause turn-ON current imbalance among paralleled SSCs. The maximum current stress will be aggravated for some SSCs. Besides, unbalanced current can lead to uneven losses. Then, the junction temperature difference (Delta T-j) between paralleled SSCs occurs. The maximum junction temperature (T-jmax) among paralleled SSCs increases accordingly. To address the issue, a low-cost and novel structure is proposed to promote turn- ON current sharing for paralleled SSCs. With aid of the structure, the immunity of turn- ON current sharing performance to an asymmetric layout can be greatly improved. The mismatched turn- ON current and losses can be well mitigated. Delta T-j and T-jmax are suppressed at the same time. The proposed structure is suitable for both the discrete SSCs and bare-die SSCs. In this structure, only some bridging branches are introduced so it takes almost no extra cost. Two prototypes are fabricated with the discrete SSCs and bare-die SSCs, respectively. Double-pulse test and continuous operation are conducted to validate the advantages of the proposed structure.

Keyword :

Additional bridging branch asymmetric layout paralleled SiC JFET/Si MOSFET Cascodes turn-ON current sharing

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Zhao, Cheng , Wang, Laili , Yang, Xu et al. A Low-Cost Novel Structure for Paralleled SiC JFETSi MOSFET Cascodes to Balance Turn-on Current and Junction Temperature [J]. | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2022 , 37 (12) : 14447-14461 .
MLA Zhao, Cheng et al. "A Low-Cost Novel Structure for Paralleled SiC JFETSi MOSFET Cascodes to Balance Turn-on Current and Junction Temperature" . | IEEE TRANSACTIONS ON POWER ELECTRONICS 37 . 12 (2022) : 14447-14461 .
APA Zhao, Cheng , Wang, Laili , Yang, Xu , Gan, Yongmei , Zhang, Hong . A Low-Cost Novel Structure for Paralleled SiC JFETSi MOSFET Cascodes to Balance Turn-on Current and Junction Temperature . | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2022 , 37 (12) , 14447-14461 .
Export to NoteExpress RIS BibTex
A Compact Double-Sided Cooling 650V/30A GaN Power Module with Low Parasitic Parameters EI SCIE Scopus
期刊论文 | 2022 , 37 (1) , 426-439 | IEEE Transactions on Power Electronics
WoS CC Cited Count: 1 SCOPUS Cited Count: 31
Abstract&Keyword Cite

Abstract :

Compared with silicon and silicon carbide devices, the unique electrical and structural characteristics of gallium nitride high electron mobility transistors (GaN HEMTs) make them have different requirements for power module integration. This article proposes a novel integration scheme for the high-voltage lateral GaN HEMT dies without bonding wires. Based on the proposed integration scheme, a compact 650 V/30 A GaN power module with low parasitic parameters and high thermal performance is designed. The GaN dies are sandwiched between two ceramic substrates to improve thermal performance and ensure consistent thermal expansion coefficients. The multiple copper layer structure is used to increase wiring flexibility to reduce parasitic parameters. The design of gate and power loop layouts is discussed, and the common-mode (CM) capacitance is optimized. A comprehensive reliability evaluation is also carried out for this integration scheme. Finally, a double-sided cooling 650 V/30 A full-bridge GaN power module with 2.4 cm×1.3 cm×0.17 cm is fabricated. The thermal resistance is reduced by 30%-48% compared with the conventional single-sided cooling module. The power loop and gate loop inductances are reduced to 0.94 nH and 2 nH, respectively, and the CM capacitance is limited to 2.5 pF. The maximum dv/dt of the drain-source voltage is high as 150 V/ns with only 10% overshoot. Based on the power module, a 3.3-kW two-phase interleaved buck converter is developed. It has 820 W/in3 power density and 98.85% peak efficiency. © 1986-2012 IEEE.

Keyword :

Capacitance Ceramic materials Cooling DC-DC converters Electric power systems Gallium nitride III-V semiconductors Inductance Integration Silicon carbide Thermal expansion Vanadium compounds

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Li, Bingyang , Yang, Xu , Wang, Kangping et al. A Compact Double-Sided Cooling 650V/30A GaN Power Module with Low Parasitic Parameters [J]. | IEEE Transactions on Power Electronics , 2022 , 37 (1) : 426-439 .
MLA Li, Bingyang et al. "A Compact Double-Sided Cooling 650V/30A GaN Power Module with Low Parasitic Parameters" . | IEEE Transactions on Power Electronics 37 . 1 (2022) : 426-439 .
APA Li, Bingyang , Yang, Xu , Wang, Kangping , Zhu, Hongkeng , Wang, Laili , Chen, Wenjie . A Compact Double-Sided Cooling 650V/30A GaN Power Module with Low Parasitic Parameters . | IEEE Transactions on Power Electronics , 2022 , 37 (1) , 426-439 .
Export to NoteExpress RIS BibTex
Modeling and Resonance Damping for the CM Loop of the MLCL-Filtered Grid-Connected Inverter With Variable Inductors Under the Weak Grid Condition EI SCIE Scopus
期刊论文 | 2022 , 10 (1) , 310-323 | IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS
SCOPUS Cited Count: 7
Abstract&Keyword Cite

Abstract :

The modified LCL (MLCL) is commonly applied in photovoltaic (PV) string inverters to suppress the leakage current and enhance the electromagnetic interference (EMI) performance of the grid current. However, the potential risk of resonance appears in the common mode (CM) loop, which was caused by the MLCL filter. In this article, the CM model of the inverter is first built considering the inductance saturation. It is found that the variable inductor brings phase margin decreasing problem and additional resonance points in the CM loop. To suppress the CM resonance (CMR), novel passive and active damping strategies are explored in this article. The improved passive damping (IPD) strategy is realized by introducing a paralleled RC unit, which greatly reduces the damping resistor losses without affecting the damping performance. Besides, a novel active damping (NAD) strategy is proposed to compensate the time delay and to raise the phase margin. Moreover, considering the gradient mutation issue brought by the discontinuous pulsewidth modulation (DPWM) scheme, an antisaturation PWM (ASPWM) scheme is applied to eliminate the oscillation. Finally, experiments are conducted on an 80-kW PV string inverter. After applying the proposed CMR damping strategy with the ASPWM scheme, CMR is fully eliminated in the whole power range despite the grid condition.

Keyword :

Capacitors Common mode resonance (CMR) damping Damping Inductance Inductors Inverters modified LCL (MLCL) Power harmonic filters Resonant frequency variable inductor

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Zhang, Jiansong , Yang, Xu , Chen, Wenjie et al. Modeling and Resonance Damping for the CM Loop of the MLCL-Filtered Grid-Connected Inverter With Variable Inductors Under the Weak Grid Condition [J]. | IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS , 2022 , 10 (1) : 310-323 .
MLA Zhang, Jiansong et al. "Modeling and Resonance Damping for the CM Loop of the MLCL-Filtered Grid-Connected Inverter With Variable Inductors Under the Weak Grid Condition" . | IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS 10 . 1 (2022) : 310-323 .
APA Zhang, Jiansong , Yang, Xu , Chen, Wenjie , Zhou, Hongwei . Modeling and Resonance Damping for the CM Loop of the MLCL-Filtered Grid-Connected Inverter With Variable Inductors Under the Weak Grid Condition . | IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS , 2022 , 10 (1) , 310-323 .
Export to NoteExpress RIS BibTex
A New Integrated Active EMI Filter Topology With Both CM Noise and DM Noise Attenuation EI SCIE Scopus
期刊论文 | 2022 , 37 (5) , 5466-5478 | IEEE TRANSACTIONS ON POWER ELECTRONICS
WoS CC Cited Count: 3 SCOPUS Cited Count: 8
Abstract&Keyword Cite

Abstract :

Integration of electromagnetic interference (EMI) filters is a good idea to further decrease the volume and weight of a power converter. However, the conventional research articles mainly focus on the integration of passive components or planar printed circuit board structures. This article proposes a new integrated active EMI filter (AEF) topology. It can attenuate both common-mode (CM) and differential-mode (DM) noise at the same time. Different from the traditional discrete CM AEFs and DM AEFs, noise sensing and cancelation of this proposed topology are performed simultaneously. The working principle and special features of this topology are analyzed in detail. Based upon the theoretical analysis, the insertion loss of this integration topology is close to the traditional separated CM AEFs or DM AEFs. Besides fewer components and dc power supply are demanded. A prototype is built and tested through experiments. Experimental results derived on standard test board and practical converter show good agreement to theoretical analysis.

Keyword :

Active EMI filters (AEFs) Attenuation Electromagnetic interference electromagnetic interference (EMI) attenuation Inductors integrated EMI filters Network topology Passive filters Sensors Topology

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Zhou, Yongxing , Chen, Wenjie , Yang, Xu et al. A New Integrated Active EMI Filter Topology With Both CM Noise and DM Noise Attenuation [J]. | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2022 , 37 (5) : 5466-5478 .
MLA Zhou, Yongxing et al. "A New Integrated Active EMI Filter Topology With Both CM Noise and DM Noise Attenuation" . | IEEE TRANSACTIONS ON POWER ELECTRONICS 37 . 5 (2022) : 5466-5478 .
APA Zhou, Yongxing , Chen, Wenjie , Yang, Xu , Zhang, Ru , Yan, Ruitao , Liu, Jinlu et al. A New Integrated Active EMI Filter Topology With Both CM Noise and DM Noise Attenuation . | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2022 , 37 (5) , 5466-5478 .
Export to NoteExpress RIS BibTex
Driving Control of GaN Devices for Transient Response Improvement of Voltage Regulator EI SCIE Scopus
期刊论文 | 2022 , 37 (12) , 14017-14022 | IEEE TRANSACTIONS ON POWER ELECTRONICS
SCOPUS Cited Count: 2
Abstract&Keyword Cite

Abstract :

With the continuous development of microprocessors, more stringent voltage regulation requirements have been put forward for the voltage regulators (VR) in the transient process. This letter proposes a driving control method for gallium nitride (GaN) devices to improve the transient response of the VR. When the GaN device conducts reverse, its source-drain voltage can be controlled by its gate voltage. During load step-down transient, the reverse conduction voltage of the GaN device is naturally applied across the inductor, which can be utilized to speed up the change rate of the inductor current. As a result, the overshoot of the output voltage can be reduced during load step-down transient. The proposed method does not need to modify the power circuit, and is easy to implement. Finally, the effectiveness of the proposed method is verified by experiments. The results show that the output voltage overshoot is reduced by 55%, and the transition time is shortened by 80% using the proposed method. The results also show that with the same overvoltage, using the proposed method can reduce the output capacitance by57% and the transition time by 77%, thereby increasing the power density of the VR circuit and saving costs.

Keyword :

Driving control fast load transient gallium nitride (GaN) overvoltage voltage regulator (VR)

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Wang, Kangping , Wei, Gaohao , Wu, Jiarui et al. Driving Control of GaN Devices for Transient Response Improvement of Voltage Regulator [J]. | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2022 , 37 (12) : 14017-14022 .
MLA Wang, Kangping et al. "Driving Control of GaN Devices for Transient Response Improvement of Voltage Regulator" . | IEEE TRANSACTIONS ON POWER ELECTRONICS 37 . 12 (2022) : 14017-14022 .
APA Wang, Kangping , Wei, Gaohao , Wu, Jiarui , Gao, Qingyuan , Chen, Wenjie , Yang, Xu . Driving Control of GaN Devices for Transient Response Improvement of Voltage Regulator . | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2022 , 37 (12) , 14017-14022 .
Export to NoteExpress RIS BibTex
A Time-Domain-Model-Based Digital Synchronous Rectification Algorithm for CLLC Resonant Converters Utilizing a Hybrid Modulation EI SCIE Scopus
期刊论文 | 2022 , 37 (3) , 2815-2829 | IEEE TRANSACTIONS ON POWER ELECTRONICS
SCOPUS Cited Count: 22
Abstract&Keyword Cite

Abstract :

For bidirectional CLLC resonant converters, synchronous rectification (SR) is a key technique that can reduce the conduction losses in rectifying side by replacing the diodes with the switches' channel. However, existing methods suffer from either complex hardware, or incomplete and imprecise control effect. Aiming at solving these problems, this article proposes a digital sensorless SR algorithm based on the time-domain model under a hybrid modulation for CLLC converters. The proposed approach can precisely enable the SR drive action within almost the whole load range and without any additional hardware, e.g., antiparallel diode, SR IC, and high bandwidth sensor. Its implementation only needs to measure dc signals (e.g., the output current), rather than any high-frequency resonant signals. Additionally, the presented algorithm can be easily implemented on a digital controller. Finally, experiments have been performed on a prototype to verify the validity and applicability of the presented SR algorithm.

Keyword :

CLLC resonant converter synchronous rectification time-domain model

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Pei, Long , Jia, Lixin , Wang, Laili et al. A Time-Domain-Model-Based Digital Synchronous Rectification Algorithm for CLLC Resonant Converters Utilizing a Hybrid Modulation [J]. | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2022 , 37 (3) : 2815-2829 .
MLA Pei, Long et al. "A Time-Domain-Model-Based Digital Synchronous Rectification Algorithm for CLLC Resonant Converters Utilizing a Hybrid Modulation" . | IEEE TRANSACTIONS ON POWER ELECTRONICS 37 . 3 (2022) : 2815-2829 .
APA Pei, Long , Jia, Lixin , Wang, Laili , Zhao, Lie , Song, Shaojie , Pei, Yunqing et al. A Time-Domain-Model-Based Digital Synchronous Rectification Algorithm for CLLC Resonant Converters Utilizing a Hybrid Modulation . | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2022 , 37 (3) , 2815-2829 .
Export to NoteExpress RIS BibTex
Current Detection and Control of Synchronous Rectifier in High-Frequency LLC Resonant Converter EI SCIE Scopus
期刊论文 | 2022 , 37 (4) , 3691-3696 | IEEE TRANSACTIONS ON POWER ELECTRONICS
SCOPUS Cited Count: 15
Abstract&Keyword Cite

Abstract :

The synchronous rectification technology is widely used to improve the efficiency of power converters in applications with low output voltage and large current. However, it is challenging to accurately control the synchronous rectifier (SR) for high-frequency and high-current LLC converters. This letter presents a method to detect the SR current for cycle-by-cycle SR control. The resonant current and the magnetizing current are detected through magnetic coupling, and then the SR current is obtained by subtracting the two. This method requires only a few passive components and has advantages, such as high bandwidth, strong anti-interference ability, and easy implementation. This letter illustrates the working principle and implementation of the proposed method in detail and then verifies the proposed method through experiments. The proposed method can be applied to SR control in an LLC circuit, suitable for high frequency and large current situations.

Keyword :

Current measurement Delays high frequency High frequency Inductance Inductors LLC Magnetic circuits Magnetic resonance Rectifiers resonant converter synchronous rectification

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Wang, Kangping , Wei, Gaohao , Wei, Jiwen et al. Current Detection and Control of Synchronous Rectifier in High-Frequency LLC Resonant Converter [J]. | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2022 , 37 (4) : 3691-3696 .
MLA Wang, Kangping et al. "Current Detection and Control of Synchronous Rectifier in High-Frequency LLC Resonant Converter" . | IEEE TRANSACTIONS ON POWER ELECTRONICS 37 . 4 (2022) : 3691-3696 .
APA Wang, Kangping , Wei, Gaohao , Wei, Jiwen , Wu, Jiarui , Wang, Laili , Yang, Xu . Current Detection and Control of Synchronous Rectifier in High-Frequency LLC Resonant Converter . | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2022 , 37 (4) , 3691-3696 .
Export to NoteExpress RIS BibTex
Modular DC Circuit Breaker With Master-Slave Concept for Gate Driver Simplification: Topology and Implementation EI SCIE Scopus
期刊论文 | 2022 , 69 (9) , 8915-8925 | IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
SCOPUS Cited Count: 2
Abstract&Keyword Cite

Abstract :

DC circuit breaker is the key equipment to deal with the interruption of short-circuit current. Compared with the mechanical switch, the solid circuit breaker and the hybrid circuit breaker using the semiconductor device to interrupt the short-circuit current exhibit superiorities in response duration and arc-less characteristics. Massive power devices controlled by corresponding gate drivers which make the semiconductors-based dc circuit breaker bulky and costly are required to withstand the high dc-bus voltage. In this article, the master-slave concept based modular circuit breaker is proposed to simplify the gate driver topology. Only one single gate driver is required to control highly compact modular submodules consisting of power devices, passive components, and diodes. Moreover, the proposed topology can be easily implemented with high flexibility and low cost. Specifically, the gate control function and voltage equalization for series-connected devices can be realized reliably. The master-slave concept and operation principle of the proposed topology are elaborated and the effectiveness has been demonstrated by both simulation and experimental test.

Keyword :

Circuit breakers DC circuit breaker gate driver Gate drivers Insulated gate bipolar transistors Logic gates modular concept Power supplies series connection silicon carbide (SiC) Topology Voltage control voltage equalization

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Ren, Yu , Zhang, Fan , Yang, Xu et al. Modular DC Circuit Breaker With Master-Slave Concept for Gate Driver Simplification: Topology and Implementation [J]. | IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS , 2022 , 69 (9) : 8915-8925 .
MLA Ren, Yu et al. "Modular DC Circuit Breaker With Master-Slave Concept for Gate Driver Simplification: Topology and Implementation" . | IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS 69 . 9 (2022) : 8915-8925 .
APA Ren, Yu , Zhang, Fan , Yang, Xu , Han, Xiaoqing , Chen, Wenjie . Modular DC Circuit Breaker With Master-Slave Concept for Gate Driver Simplification: Topology and Implementation . | IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS , 2022 , 69 (9) , 8915-8925 .
Export to NoteExpress RIS BibTex
A Novel Neutral Point-Based Active EMI Filter for Common Mode Noise Attenuation EI SCIE Scopus
期刊论文 | 2022 , 37 (9) , 10081-10085 | IEEE TRANSACTIONS ON POWER ELECTRONICS
SCOPUS Cited Count: 5
Abstract&Keyword Cite

Abstract :

This letter proposed a new configuration of neutral point-based common mode (CM) active electromagnetic interference (EMI) filter (NP-CM-AEF). It is achieved by setting the reference of filtering system to the neutral point of equipment under test. Therefore, CM noise could be sensed across neutral point and ground. Meanwhile, compensation signal could be built by op-amp and re-injected to cancel the initial CM noise. The main advantage of the proposed NP-CM-AEF lies in that no more noise separation such as bulky passive CM transformer is needed to get pure CM noise. The whole filter becomes smaller, lighter, and more compact compared with traditional CM AEF. Working principle is analyzed in details and hardware experimental tests are also performed. It shows that the proposed NP-CM-AEF has a good attenuation to CM noise and total size is pretty tiny.

Keyword :

Active electromagnetic interference (EMI) filters Attenuation Capacitors common mode noise Electromagnetic interference EMI attenuation Impedance Passive filters Sensors Topology

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Zhou, Yongxing , Chen, Wenjie , Yang, Xu et al. A Novel Neutral Point-Based Active EMI Filter for Common Mode Noise Attenuation [J]. | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2022 , 37 (9) : 10081-10085 .
MLA Zhou, Yongxing et al. "A Novel Neutral Point-Based Active EMI Filter for Common Mode Noise Attenuation" . | IEEE TRANSACTIONS ON POWER ELECTRONICS 37 . 9 (2022) : 10081-10085 .
APA Zhou, Yongxing , Chen, Wenjie , Yang, Xu , Yu, Zheyuan , Meng, Xin , Ren, Pengyuan et al. A Novel Neutral Point-Based Active EMI Filter for Common Mode Noise Attenuation . | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2022 , 37 (9) , 10081-10085 .
Export to NoteExpress RIS BibTex
10| 20| 50 per page
< Page ,Total 36 >

Export

Results:

Selected

to

Format:
FAQ| About| Online/Total:1569/170512086
Address:XI'AN JIAOTONG UNIVERSITY LIBRARY(No.28, Xianning West Road, Xi'an, Shaanxi Post Code:710049) Contact Us:029-82667865
Copyright:XI'AN JIAOTONG UNIVERSITY LIBRARY Technical Support:Beijing Aegean Software Co., Ltd.