• Complex
  • Title
  • Author
  • Keyword
  • Abstract
  • Scholars
High Impact Results & Cited Count Trend for Year Keyword Cloud and Partner Relationship

Query:

学者姓名:杨旭

Refining:

Source

Submit Unfold

Co-Author

Submit Unfold

Language

Submit

Clean All

Export Sort by:
Default
  • Default
  • Title
  • Year
  • WOS Cited Count
  • Impact factor
  • Ascending
  • Descending
< Page ,Total 26 >
A fixed topology Thevenin equivalent integral model for modular multilevel converters EI SCIE Scopus
期刊论文 | 2018 , 28 (3) | INTERNATIONAL TRANSACTIONS ON ELECTRICAL ENERGY SYSTEMS
Abstract&Keyword Cite

Abstract :

The Thevenin equivalent model for half-bridge modular multilevel converters on electromagnetic transient simulation, applying 2-state resistances to represent switches and adopting Dommel's algorithm to get a discretized capacitance in each submodule, achieves good central processing unit time saving while maintaining the identity of every submodule. But the large number of changeable resistances still brings a computational challenge for simulation efficiency, because the admittance matrix gets an equaled size to the amount of nodes, and inverts (re-triangularizes) each time when a switch performs. This paper presents a novel fixed topology Thevenin equivalent half-bridge modular multilevel converter integral model and simplifies its mathematical expression markedly. The choice of integration methods is also performed by discussion of the stability, and backward Euler algorithm is selected for further speedup. Basically, it achieves speedup by (1) the use of novel Thevenin equivalent model to achieve unchangeable admittance matrix while regarding the switches as excitations; (2) merging the elements (inductances, resistances, and submodules) in the arm of modular multilevel converter by Thevenin equivalent to reduce the order of admittance matrix; (3) simplifying the mathematica expression of sub module by Thevenin equivalent and omitting the small resistance; and (4) the use of backward Euler algorithm to discretize all the elements (capacitances, inductances, resistances, and submodules) in the circuit for a better convergence speed and larger speedup factor. The model is implemented in a 3-phase grid-connected modular multilevel converter circuit; the results show that the proposed Thevenin equivalent integral model makes a good accuracy on simulating the performances of the half-bridge modular multilevel converter with drastically reduced computational time.

Keyword :

stability electromagnetic transients (EMT) power electronics Thevenin equivalent modular multilevel converter (MMC)

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Zhang, Feng , Yang, Xu , Huang, Lang et al. A fixed topology Thevenin equivalent integral model for modular multilevel converters [J]. | INTERNATIONAL TRANSACTIONS ON ELECTRICAL ENERGY SYSTEMS , 2018 , 28 (3) .
MLA Zhang, Feng et al. "A fixed topology Thevenin equivalent integral model for modular multilevel converters" . | INTERNATIONAL TRANSACTIONS ON ELECTRICAL ENERGY SYSTEMS 28 . 3 (2018) .
APA Zhang, Feng , Yang, Xu , Huang, Lang , Wang, Kangping , Xu, Guangzhao , Li, Yang et al. A fixed topology Thevenin equivalent integral model for modular multilevel converters . | INTERNATIONAL TRANSACTIONS ON ELECTRICAL ENERGY SYSTEMS , 2018 , 28 (3) .
Export to NoteExpress RIS BibTex
Instability Analysis and Oscillation Suppression of Enhancement-Mode GaN Devices in Half-Bridge Circuits EI SCIE Scopus
期刊论文 | 2018 , 33 (2) , 1585-1596 | IEEE TRANSACTIONS ON POWER ELECTRONICS
WoS CC Cited Count: 1
Abstract&Keyword Cite

Abstract :

This paper analyzes the problem of instability in enhancement-mode gallium nitride (GaN) transistors based half-bridge circuits. The instability may cause sustained oscillation, resulting in overvoltage, excessive electromagnetic interference (EMI), and even device breakdown. GaN devices operate in the saturation region when they conduct reversely during the dead time. Under the influence of parasitic parameters, the GaN-based half-bridge circuit exhibits positive feedback under certain conditions, thus, resulting in sustained oscillation. A small-signal model is proposed to study this positive feedback phenomenon. Like the second-order under-damped system, damping ratio is defined to determine the system's stability. Based on the model, the influence of circuit parameters on instability is investigated and guidelines to suppress the oscillation are given. Reducing the common-source inductance, increasing the gate resistance of the inactive switch or connecting a diode in parallel to the inactive switch are some effective ways to suppress the oscillation. Finally, the analyses are verified by both simulation and experiment.

Keyword :

sustained oscillation Gallium nitride (GaN) parasitic reverse conduction positive feed-back

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Wang, Kangping , Yang, Xu , Wang, Laili et al. Instability Analysis and Oscillation Suppression of Enhancement-Mode GaN Devices in Half-Bridge Circuits [J]. | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (2) : 1585-1596 .
MLA Wang, Kangping et al. "Instability Analysis and Oscillation Suppression of Enhancement-Mode GaN Devices in Half-Bridge Circuits" . | IEEE TRANSACTIONS ON POWER ELECTRONICS 33 . 2 (2018) : 1585-1596 .
APA Wang, Kangping , Yang, Xu , Wang, Laili , Jain, Praveen . Instability Analysis and Oscillation Suppression of Enhancement-Mode GaN Devices in Half-Bridge Circuits . | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (2) , 1585-1596 .
Export to NoteExpress RIS BibTex
Research on a 4000-V-Ultrahigh Input-Switched-Mode Power Supply Using Series-Connected MOSFETs EI SCIE Scopus
期刊论文 | 2018 , 33 (7) , 5995-6011 | IEEE TRANSACTIONS ON POWER ELECTRONICS
WoS CC Cited Count: 1
Abstract&Keyword Cite

Abstract :

A 4000-V-ultrahigh-input voltage-switched-mode power supply (UHV-SMPS) using series-connected MOSFETs is designed in this paper. The main contributions of the proposed scheme include the common-mode interference modeling of the multiswitch structure, voltage balance of the switches and driving method. First, the common-mode interference of UHV-SMPS is evaluated by a high-frequency equivalent model of the proposed scheme. Then, a detailed multiswitch common-mode electromagnetic interference mathematical model is derived and the interference quantity is calculated according to the coupling of series-connected switches. Second, a new mathematical regulation for passive snubber circuit is proposed to realize input voltage balance. Through the regularity of the equivalent parasitic capacitances, the design of compensatory capacitance and voltage balance can realized with ease. Third, a novel driving method based on integrated pulse transformer is proposed. It can achieve both good consistency to the gate signals of MOSFETs and ultrahigh isolation voltage in the wide range input applications. Finally, the experimental results obtained from a 300-4000 V wide range input prototype verified the feasibility of the proposed scheme and accuracy of the theoretical analysis.

Keyword :

ultrahigh input Common-mode (CM) interference voltage balance series connected

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Chen, Xiliang , Chen, Wenjie , Yang, Xu et al. Research on a 4000-V-Ultrahigh Input-Switched-Mode Power Supply Using Series-Connected MOSFETs [J]. | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (7) : 5995-6011 .
MLA Chen, Xiliang et al. "Research on a 4000-V-Ultrahigh Input-Switched-Mode Power Supply Using Series-Connected MOSFETs" . | IEEE TRANSACTIONS ON POWER ELECTRONICS 33 . 7 (2018) : 5995-6011 .
APA Chen, Xiliang , Chen, Wenjie , Yang, Xu , Han, Yaqiang , Hao, Xiang , Xiao, Tianluan . Research on a 4000-V-Ultrahigh Input-Switched-Mode Power Supply Using Series-Connected MOSFETs . | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (7) , 5995-6011 .
Export to NoteExpress RIS BibTex
A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices EI SCIE Scopus
期刊论文 | 2018 , 33 (7) , 6199-6210 | IEEE TRANSACTIONS ON POWER ELECTRONICS
Abstract&Keyword Cite

Abstract :

Gallium nitride (GaN) devices are suitable for high-frequency power converters due to their excellent switching performance. To maximize the performance of GaN devices, it is necessary to study the switching characteristics, which requires measuring the switching current. However, GaN devices have a fast switching speed and are sensitive to parasitic parameters, so the current measurement should have a high bandwidth and should not introduce excessive parasitic inductance into the power converters. Traditional current measurements are difficult to meet these requirements, especially for fast GaN devices. This paper presents a high-bandwidth integrated current measurement for detecting the switching current of fast GaN devices. By effectively utilizing the parasitic inductance in the circuit, a single-turn coil is embedded in the printed circuit board. This coil could pick up a sufficiently strong voltage signal, which is then processed to reconstruct the switching current. Moreover, corrections are carried out to further improve the accuracy. The current measurement has a small insertion impedance and a high bandwidth with a small influence on the parasitic inductance of the converter. The accuracy of the current measurement is experimentally verified by a 40 V GaN-based double pulse test circuit with a load current up to 25 A.

Keyword :

double pulse test circuit gallium nitride (GaN) Current measurement parasitic inductance high bandwidth

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Wang, Kangping , Yang, Xu , Li, Hongchang et al. A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices [J]. | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (7) : 6199-6210 .
MLA Wang, Kangping et al. "A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices" . | IEEE TRANSACTIONS ON POWER ELECTRONICS 33 . 7 (2018) : 6199-6210 .
APA Wang, Kangping , Yang, Xu , Li, Hongchang , Wang, Laili , Jain, Praveen . A High-Bandwidth Integrated Current Measurement for Detecting Switching Current of Fast GaN Devices . | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (7) , 6199-6210 .
Export to NoteExpress RIS BibTex
Delay and Decoupling Analysis of a Digital Active EMI Filter Used in Arc Welding Inverter EI SCIE Scopus
期刊论文 | 2018 , 33 (8) , 6710-6722 | IEEE TRANSACTIONS ON POWER ELECTRONICS
Abstract&Keyword Cite

Abstract :

Arc welding inverter supply with switch and digital control is widely used, due to the advantages of high controllability, small size, and high efficiency. With the constant increasing of switching frequency and decreasing of arc welding machine size, the conducted electromagnetic interference (EMI) becomes serious, especially for commonmode (CM)-conducted EMI. Mean-while, as the development of digital processing technique, digital active EMI filter (DAEF) technology, which uses digital control and embedded mode, has become a hot research topic. However, the conventional DAEF fails to consider time delay effect. Its model cannot accurately describe DAEF filtering behavior. Moreover, decoupling circuit lacks scientific design method. To cope with these, this paper proposes a precise DAEF model which considers both the time delay of digital processing portion and the parasitic parameters of passive components. Moreover, based on impedance matching principle, a detailed and scientific design method of decoupling circuit is put forward. Meanwhile, the arc welding inverter system with embedded DAEF is designed, modeled, and compensated. Finally, experiment results show that the proposed precise model can predict the system filtering performance accurately. And the proposed design method of decoupling circuit is very effective to suppress the CM-conducted EMI. The embedded DAEF can improve system stability and dynamic performance.

Keyword :

decoupling EMI Common mode (CM) conducted electromagnetic interference (EMI) delay model EMI filter digital active embedded

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Ji, Junpeng , Chen, Wenjie , Yang, Xu et al. Delay and Decoupling Analysis of a Digital Active EMI Filter Used in Arc Welding Inverter [J]. | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (8) : 6710-6722 .
MLA Ji, Junpeng et al. "Delay and Decoupling Analysis of a Digital Active EMI Filter Used in Arc Welding Inverter" . | IEEE TRANSACTIONS ON POWER ELECTRONICS 33 . 8 (2018) : 6710-6722 .
APA Ji, Junpeng , Chen, Wenjie , Yang, Xu , Lu, Jingjie . Delay and Decoupling Analysis of a Digital Active EMI Filter Used in Arc Welding Inverter . | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (8) , 6710-6722 .
Export to NoteExpress RIS BibTex
Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs EI SCIE Scopus
期刊论文 | 2018 , 33 (5) , 3802-3815 | IEEE TRANSACTIONS ON POWER ELECTRONICS
WoS CC Cited Count: 1
Abstract&Keyword Cite

Abstract :

This paper presents a new active gate drive (AGD) for switching performance improvement and overvoltage protection of high-power insulated gate bipolar transistors (IGBTs). In addition to the conventional gate drive (CGD) based on fixed voltage sources and fixed gate drive resistors, the proposed AGD has a complementary current source to provide extra gate drive current into the gate. Specific transient switching stages of the IGBT can be therefore accelerated, leading to higher switching speed and lower switching loss of the IGBT. Additionally, the turn-off voltage overshoot of the IGBT can be controlled at a preset reference value with a fast closed-loop overvoltage protection circuit. Moreover, the switching speed of the IGBT, including the turn-on/off delay times and the turn-on/off voltage slopes, can be effectively regulated with an adaptive switching speed control method. Accordingly, the gate drive is capable of operating the IGBT at specified delay times and fixed voltage slopes when varying the switching conditions (e.g., temperature, load current). The operation principle of the proposed AGD and control concept are presented. By comparing with the CGD, the proposed method is experimentally verified on a 3.3 kV/1.5 kA IGBT module in both double-pulse and multipulse tests.

Keyword :

insulated gate bipolar transistors (IGBTs) overvoltage protection Active gate drive (AGD) switching loss adaptive feedback control

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Zhang, Fan , Yang, Xu , Ren, Yu et al. Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs [J]. | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (5) : 3802-3815 .
MLA Zhang, Fan et al. "Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs" . | IEEE TRANSACTIONS ON POWER ELECTRONICS 33 . 5 (2018) : 3802-3815 .
APA Zhang, Fan , Yang, Xu , Ren, Yu , Feng, Lei , Chen, Wenjie , Pei, Yunqing . Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs . | IEEE TRANSACTIONS ON POWER ELECTRONICS , 2018 , 33 (5) , 3802-3815 .
Export to NoteExpress RIS BibTex
A fast IGBT model considering the dynamic performance of both IGBT and antiparallel diode EI CPCI-S Scopus
会议论文 | 2018 , 276-279 | 33nd Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
Abstract&Keyword Cite

Abstract :

A fast Thvenin equivalent model for IGBT considering the dynamic performance of both IGBT and antiparallel diode based on datasheet is proposed to increase the efficiency of power electronics transient simulation. In this paper, the conducting details of an IGBT with antiparallel diode switch are represented by a fixed topology equivalent: a voltage source in series with a constant resistance. For the first time, three devices are intergrated inside one model, and the conducting device is dynamically alternative among three statuses: IGBT, diode and open circuit, reflected in the changeable voltage source. So unchangeable admittance matrix is gained despite of the variation of conducting devices, which tremendously accelerates the calculation. A single phase half-bridge inverter circuit is tested applying the proposed model, and its accuracy and efficiency are validated.

Keyword :

IGBT power electronics Thevenin equivalent fixed topology modelling

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Zhang, Feng , Yang, Xu , Xue, Wei et al. A fast IGBT model considering the dynamic performance of both IGBT and antiparallel diode [C] . 2018 : 276-279 .
MLA Zhang, Feng et al. "A fast IGBT model considering the dynamic performance of both IGBT and antiparallel diode" . (2018) : 276-279 .
APA Zhang, Feng , Yang, Xu , Xue, Wei , Xie, Ruiliang , Li, Yang , Sha, Yilin . A fast IGBT model considering the dynamic performance of both IGBT and antiparallel diode . (2018) : 276-279 .
Export to NoteExpress RIS BibTex
Energy Management of Microgrid in Smart Building Considering Air Temperature Impact EI CPCI-S Scopus
会议论文 | 2018 , 2398-2404 | 33nd Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
Abstract&Keyword Cite

Abstract :

The economic dispatch is based on finding the optimal combination of all the energy resources of the microgrid. In this paper, a smart building microgrid model is supplied by diesel generators, PV, energy storage system (ESS), and main grid. The objective of this paper is to manage the generation resources which operate over a time horizon while satisfying many key constraints in low cost. In order to achieve better energy efficiency in the building, this paper proposed an improved energy management operation. In the proposed operation, the economic dispatch operation ED is presented according to such aspects as air temperature impact, the resistance of building shell, time horizon and so on. The accuracy and feasibility of the proposed energy management operation has been validated by GAMS simulation results.

Keyword :

economic dispatch Smart building microgrid Air temperature impact

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Abou Houran, Mohamad , Yang, Xu , Chen, Wenjie . Energy Management of Microgrid in Smart Building Considering Air Temperature Impact [C] . 2018 : 2398-2404 .
MLA Abou Houran, Mohamad et al. "Energy Management of Microgrid in Smart Building Considering Air Temperature Impact" . (2018) : 2398-2404 .
APA Abou Houran, Mohamad , Yang, Xu , Chen, Wenjie . Energy Management of Microgrid in Smart Building Considering Air Temperature Impact . (2018) : 2398-2404 .
Export to NoteExpress RIS BibTex
Modeling the Gate Driver IC for GaN Transistor: A Black-Box Approach EI CPCI-S Scopus
会议论文 | 2018 , 2900-2904 | 33nd Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
WoS CC Cited Count: 1
Abstract&Keyword Cite

Abstract :

During the switching performance evaluation for Si-based power devices, the gate driver IC's are commonly neglected because of Si device's slow switching speed. GaN transistors, with much smaller intrinsic capacitances, would enable faster switching speed and higher switching frequency. Consequently, the gate driver would largely impact the switching performance as well as the dead-time of the GaN transistor. In previous works, however, the gate driver IC used to drive GaN transistor have been ignored in circuit simulation, leading to lower modeling accuracy. In consideration of the lack of gate driver IC's critical design parameters, along with less familiarity of power electronics engineer/researcher with the semiconductor technologies, the gate driver IC could be regarded as a "black-box". Despite the difficulty in directly performing measurements inside the driver chip package, a black-box modeling method could be proposed. Based on the measured terminal current/voltage signals in a typical gate drive scheme, the I-V characteristics of the PMOS in the totem-pole topology could be extracted. With respect to the C-V curves, the characteristics of a discrete Si MOSFET with comparable voltage/current rating could be introduced. Taking into account the operating principle of the totem-pole topology, a circuit-level model could be established. Consequently, the simulated waveforms are in reasonable agreements with the testing results. Taking advantages of the proposed black-box modeling method, the switching transient waveforms as well as the dead-time of GaN transistor could be more accurately evaluated.

Keyword :

gate driver IC modeling black-box approach GaN transistor

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Xie, Ruiliang , Xu, Guangzhao , Yang, Xu et al. Modeling the Gate Driver IC for GaN Transistor: A Black-Box Approach [C] . 2018 : 2900-2904 .
MLA Xie, Ruiliang et al. "Modeling the Gate Driver IC for GaN Transistor: A Black-Box Approach" . (2018) : 2900-2904 .
APA Xie, Ruiliang , Xu, Guangzhao , Yang, Xu , Tang, Gaofei , Wei, Jin , Tian, Yidong et al. Modeling the Gate Driver IC for GaN Transistor: A Black-Box Approach . (2018) : 2900-2904 .
Export to NoteExpress RIS BibTex
Modeling and Simulation on Overall-train EMI of China Standardized High-speed Train EI CPCI-S Scopus
会议论文 | 2018 , 953-955 | Joint 60th IEEE International Symposium on Electromagnetic Compatibility (EMC) / IEEE Asia-Pacific Symposium on Electromagnetic Compatibility (APEMC)
Abstract&Keyword Cite

Abstract :

With the development of China high-speed train technology, high-speed train has entered the mass production stage nowadays. But the EMI control technology for the assembled overall-train is immature, and the EMI mechanism of the overall-train is not clear enough as well. In this paper, the EMI control is not ideal after assembly of China standardized high-speed train, and this paper studies the EMI mechanism of the train. An EMI model for high-speed train has been established. The model which have direct meaning to the EMI problem in the present stage of the standardized train group can be predict the EMI characteristics of the overall-train accurately.

Keyword :

field test EMI EMI model standardized high-speed train simulation verification

Cite:

Copy from the list or Export to your reference management。

GB/T 7714 Ji, Junpeng , Liu, Yikun , Chen, Wenjie et al. Modeling and Simulation on Overall-train EMI of China Standardized High-speed Train [C] . 2018 : 953-955 .
MLA Ji, Junpeng et al. "Modeling and Simulation on Overall-train EMI of China Standardized High-speed Train" . (2018) : 953-955 .
APA Ji, Junpeng , Liu, Yikun , Chen, Wenjie , Li, Jingang , Yang, Xu . Modeling and Simulation on Overall-train EMI of China Standardized High-speed Train . (2018) : 953-955 .
Export to NoteExpress RIS BibTex
10| 20| 50 per page
< Page ,Total 26 >

Export

Results:

Selected

to

Format:
FAQ| About| Online/Total:3382/48837189
Address:XI'AN JIAOTONG UNIVERSITY LIBRARY(No.28, Xianning West Road, Xi'an, Shaanxi Post Code:710049) Contact Us:029-82667865
Copyright:XI'AN JIAOTONG UNIVERSITY LIBRARY Technical Support:Beijing Aegean Software Co., Ltd.