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< Page ,Total 19 >
Produce large-sized porous ZnO ceramics at a low temperature down to 573 K SCIE
期刊论文 | 2019 , 242 , 160-162 | MATERIALS LETTERS
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Abstract :

Large-sized porous ZnO ceramics were successfully produced at a low temperature down to 573 K for the first time. The ceramics were composed of pores with a diameter of hundreds of nanometers and intersected ZnO nanosheets with a thickness of tens of nanometers, and their bending strength was up to 41.4 MPa when its porosity was about 43%, which meant that their strength and the bonds between their building blocks were exactly the same as those in the ceramics produced by sintering its preforms at a high temperature. (C) 2019 Elsevier B.V. All rights reserved.

Keyword :

Porous materials Ceramics

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GB/T 7714 Yan, Guojun , Wang, Liyu , Yan, Changming et al. Produce large-sized porous ZnO ceramics at a low temperature down to 573 K [J]. | MATERIALS LETTERS , 2019 , 242 : 160-162 .
MLA Yan, Guojun et al. "Produce large-sized porous ZnO ceramics at a low temperature down to 573 K" . | MATERIALS LETTERS 242 (2019) : 160-162 .
APA Yan, Guojun , Wang, Liyu , Yan, Changming , Qiu, Yu , Chen, Guangde . Produce large-sized porous ZnO ceramics at a low temperature down to 573 K . | MATERIALS LETTERS , 2019 , 242 , 160-162 .
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Orientational Epitaxy of van der Waals Molecular Heterostructures EI SCIE PubMed Scopus
期刊论文 | 2018 , 18 (8) , 5257-5261 | NANO LETTERS
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Abstract :

The shape of individual building blocks is an important parameter in bottom-up self-assembly of nanostructured materials. A simple shape change from sphere to spheroid can significantly affect the assembly process due to the modification to the orientational degrees of freedom. When a layer of spheres is placed upon a layer of spheroids, the strain at the interface can be minimized by the spheroid taking a special orientation. C-70 fullerenes represent the smallest spheroids, and their interaction with a sphere-like C-g0 is investigated. We find that the orientation of the C-70 within a close-packed C-70 layer can be steered by contacting a layer of C-60. This orientational steering phenomenon is potentially useful for epitaxial growth of multilayer van der Waals molecular heterostructures.

Keyword :

van der Waals heterostructures epitaxy graphene scanning tunnelling microscopy interface fullerene self-assembly

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GB/T 7714 Guo, Lu'an , Wang, Yitao , Kaya, Dogan et al. Orientational Epitaxy of van der Waals Molecular Heterostructures [J]. | NANO LETTERS , 2018 , 18 (8) : 5257-5261 .
MLA Guo, Lu'an et al. "Orientational Epitaxy of van der Waals Molecular Heterostructures" . | NANO LETTERS 18 . 8 (2018) : 5257-5261 .
APA Guo, Lu'an , Wang, Yitao , Kaya, Dogan , Palmer, Richard E. , Chen, Guangde , Guo, Quanmin . Orientational Epitaxy of van der Waals Molecular Heterostructures . | NANO LETTERS , 2018 , 18 (8) , 5257-5261 .
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Non-Hermitian shortcut to adiabaticity of two- and three-level systems with gain and loss SCIE
期刊论文 | 2017 , 71 (1) | EUROPEAN PHYSICAL JOURNAL D | IF: 1.393
WoS CC Cited Count: 3
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Achieving effectively adiabatic dynamics in finite time is a ubiquitous goal in virtually all fields of modern physics. So-called shortcuts to adiabaticity refer to a set of methods and techniques that allow us to obtain in a short time the same final state that would result from an adiabatic, infinitely slow process. In this paper we generalized the non-Hermitian shortcut method to the situation of the unbalanced gain and loss. We found that the ratio between the gain and loss can control the transfer time and may become a new freedom to speed up the adiabatic transfer process. By using two-level Landau-Zener model and Allen-Eberly model and three-level stimulated Raman adiabatic passage, we investigated the transfer processes and obtained the analytical results about the final transfer time, which are related with the parameters of the corresponding systems. It is pointed out that these processes can be implemented in many systems experimentally such as coupled optical waveguides.

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GB/T 7714 Li, Guan-Qiang , Chen, Guang-De , Peng, Ping et al. Non-Hermitian shortcut to adiabaticity of two- and three-level systems with gain and loss [J]. | EUROPEAN PHYSICAL JOURNAL D , 2017 , 71 (1) .
MLA Li, Guan-Qiang et al. "Non-Hermitian shortcut to adiabaticity of two- and three-level systems with gain and loss" . | EUROPEAN PHYSICAL JOURNAL D 71 . 1 (2017) .
APA Li, Guan-Qiang , Chen, Guang-De , Peng, Ping , Qi, wei . Non-Hermitian shortcut to adiabaticity of two- and three-level systems with gain and loss . | EUROPEAN PHYSICAL JOURNAL D , 2017 , 71 (1) .
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Excitation Dependent Phosphorous Property and New Model of the Structured Green Luminescence in ZnO SCIE PubMed Scopus
期刊论文 | 2017 , 7 | SCIENTIFIC REPORTS | IF: 4.122
WoS CC Cited Count: 8 SCOPUS Cited Count: 9
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Abstract :

The copper induced green luminescence (GL) with two sets of fine structures in ZnO crystal has been found for several decades (i.e., R. Dingle, Phys. Rev. Lett. 23, 579 (1969)), but the physical origin of the doublet still remains as an open question up to now. In this paper, we provide new insight into the mechanism of the structured GL band in terms of new experimental findings and theoretical calculations. It is found, for the first time, that the GL signal exhibits persistent afterglow for tens of minutes after the switch-off of below-band-gap excitation light but it cannot occur under above-band-gap excitation. Such a phosphorous property may be interpreted as de-trapping and feeding of electrons from a shallow trapping level via the conduction band to the Cu-related luminescence centers where the Cu3+ ion is proposed to work as the final state of the GL emission. From first-principles calculation, such a Cu3+ ion in wurtzite ZnO prefers a high spin 3d(8) state with two non-degenerated half-filled orbitals due to the Jahn-Teller effect, probably leading to the double structures in photoluminescence spectrum. Therefore, this model gives a comprehensively new understanding on the mechanism of the structured GL band in ZnO.

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GB/T 7714 Ye, Honggang , Su, Zhicheng , Tang, Fei et al. Excitation Dependent Phosphorous Property and New Model of the Structured Green Luminescence in ZnO [J]. | SCIENTIFIC REPORTS , 2017 , 7 .
MLA Ye, Honggang et al. "Excitation Dependent Phosphorous Property and New Model of the Structured Green Luminescence in ZnO" . | SCIENTIFIC REPORTS 7 (2017) .
APA Ye, Honggang , Su, Zhicheng , Tang, Fei , Wang, Mingzheng , Chen, Guangde , Wang, Jian et al. Excitation Dependent Phosphorous Property and New Model of the Structured Green Luminescence in ZnO . | SCIENTIFIC REPORTS , 2017 , 7 .
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The synthesis of hierarchically meso-macroporus aluminum nitrides microparticles via aluminum alloy nitridization EI SCIE Scopus
期刊论文 | 2017 , 186 , 271-273 | MATERIALS LETTERS | IF: 2.687
WoS CC Cited Count: 1 SCOPUS Cited Count: 1
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in the paper, for the first time, the synthesis of aluminum nitrides microparticles with a hierarchically meso-macroporus structure were reported by an aluminum-magnesium alloy nitridization routine. The hierarchically meso-macroporous aluminum nitrogen with a specific surface area of 97.7 m(2)/g and a specific mesopore volume of 0.10 cm(3)/g was prepared by nitriding an aluminum-magnesium alloy with diameters between 75 mu m and 150 mu m at the temperature 500 degrees C for 8 h firstly, and then 800 degrees C for 6 h.

Keyword :

Semiconductors Metals and alloy Porous materials Aluminum nitrides

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GB/T 7714 Yan, Guojun , Cun, Minmin , Li, Meng et al. The synthesis of hierarchically meso-macroporus aluminum nitrides microparticles via aluminum alloy nitridization [J]. | MATERIALS LETTERS , 2017 , 186 : 271-273 .
MLA Yan, Guojun et al. "The synthesis of hierarchically meso-macroporus aluminum nitrides microparticles via aluminum alloy nitridization" . | MATERIALS LETTERS 186 (2017) : 271-273 .
APA Yan, Guojun , Cun, Minmin , Li, Meng , Wang, Liyi , Chen, Guangde , Hui, Chunli et al. The synthesis of hierarchically meso-macroporus aluminum nitrides microparticles via aluminum alloy nitridization . | MATERIALS LETTERS , 2017 , 186 , 271-273 .
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Extinction of the zero-phonon line and the first-order phonon sideband in excitonic luminescence of ZnO at room temperature: the self-absorption effect EI SCIE Scopus CSCD
期刊论文 | 2017 , 62 (22) , 1525-1529 | SCIENCE BULLETIN | IF: 4.136
WoS CC Cited Count: 1
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It is firmly demonstrated in experiment that the self-absorption (SA) effect can lead to the extinction of the zero-phonon line and the first-order longitudinal optical phonon sideband of free excitonic luminescence of ZnO at room temperature. Moreover, effectiveness degree of SA effect is found to be dependent on both absorption coefficient and travelling distance of emitted photons, as well as even lattice temperature, which is uniquely reflected by the redshift amount in emission peak in ZnO. It is also unambiguously proved that the SA effect still strictly obeys the Beer-Lambert law of absorption. This work not only uncovers the long-term puzzle of significant redshift of emission peak of ZnO at higher temperatures, but also shows that the SA effect may have to be carefully taken into consideration in the study of spontaneous emission, laser and relevant optoelectronic processes in luminescent materials and optoelectronic devices. (C) 2017 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.

Keyword :

Excitonic luminescence Two-photon absorption Phonon-assisted luminescence Self-absorption

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GB/T 7714 Ye, Honggang , Su, Zhicheng , Tang, Fei et al. Extinction of the zero-phonon line and the first-order phonon sideband in excitonic luminescence of ZnO at room temperature: the self-absorption effect [J]. | SCIENCE BULLETIN , 2017 , 62 (22) : 1525-1529 .
MLA Ye, Honggang et al. "Extinction of the zero-phonon line and the first-order phonon sideband in excitonic luminescence of ZnO at room temperature: the self-absorption effect" . | SCIENCE BULLETIN 62 . 22 (2017) : 1525-1529 .
APA Ye, Honggang , Su, Zhicheng , Tang, Fei , Zheng, Changcheng , Chen, Guangde , Wang, Jian et al. Extinction of the zero-phonon line and the first-order phonon sideband in excitonic luminescence of ZnO at room temperature: the self-absorption effect . | SCIENCE BULLETIN , 2017 , 62 (22) , 1525-1529 .
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Adsorption behavior of formaldehyde on ZnO (10(1)over-bar0) surface: A first principles study EI SCIE Scopus
期刊论文 | 2017 , 423 , 451-456 | APPLIED SURFACE SCIENCE | IF: 4.439
WoS CC Cited Count: 1 SCOPUS Cited Count: 2
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Abstract :

In a first principles study of the formaldehyde adsorption on ZnO surface, we found a novel chain adsorption structure on ZnO (10 (1) over bar0) plane. This adsorption structure results from the electrostatic interactions between those adsorbed formaldehyde molecules and the unique arrangement of Zn-O surface dimers on (10 (1) over bar0) plane. This adsorption mechanism has the potential to extend to other wurtzite materials' (10 (1) over bar0) plane and other similar cases. As the physical adsorption configurations are unstable, the chemical adsorption has to happen. The electronic properties show that the C = O double bond in CH2O turns into C-O single bond and the highest occupied molecule orbital (HOMO) of formaldehyde is lifted into ZnO band gap becoming the hole trapping center. These results may be meaningful for formaldehyde degradation and detection. (C) 2017 Elsevier B.V. All rights reserved.

Keyword :

ZnO Formaldehyde First principles Adsorption

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GB/T 7714 Jin, Wentao , Chen, Guangde , Duan, Xiangyang et al. Adsorption behavior of formaldehyde on ZnO (10(1)over-bar0) surface: A first principles study [J]. | APPLIED SURFACE SCIENCE , 2017 , 423 : 451-456 .
MLA Jin, Wentao et al. "Adsorption behavior of formaldehyde on ZnO (10(1)over-bar0) surface: A first principles study" . | APPLIED SURFACE SCIENCE 423 (2017) : 451-456 .
APA Jin, Wentao , Chen, Guangde , Duan, Xiangyang , Yin, Yuan , Ye, Honggang , Wang, Dan et al. Adsorption behavior of formaldehyde on ZnO (10(1)over-bar0) surface: A first principles study . | APPLIED SURFACE SCIENCE , 2017 , 423 , 451-456 .
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Role of free electrons in phosphorescence in n-type wide bandgap semiconductors SCIE Scopus
期刊论文 | 2017 , 19 (45) , 30332-30338 | PHYSICAL CHEMISTRY CHEMICAL PHYSICS | IF: 3.906
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Long persistent phosphorescence is generally known as a phenomenon involving carrier traps induced by defects or impurities in crystals. In this paper, phosphorescence sustained for tens of minutes was found in intentionally undoped ZnO and it was proposed to be a universal phenomenon in wide bandgap semiconductors upon satisfying several conditions. A new model was built to understand this attractive phenomenon within the framework of the traditional trapping-detrapping model but it was modified by considering the free electrons in the conduction band as a significant contributor to the long persistent phosphorescence besides the electrons trapped by shallow donors. This model, explicitly expressed as I(t) proportional to [1 + M(1 - Fe (-gamma t))(-2)]e(-gamma)t, is not only capable of giving a quantitative description of the non-exponential decay of phosphorescence in a wide temperature range but also enables one to determine the depth of shallow donors in semiconductors. The participation of free electrons in phosphorescence was further confirmed by another carefully designed experiment. Thus, this study may represent significant progress in understanding phosphorescence.

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GB/T 7714 Ye, H. G. , Su, Z. C. , Tang, F. et al. Role of free electrons in phosphorescence in n-type wide bandgap semiconductors [J]. | PHYSICAL CHEMISTRY CHEMICAL PHYSICS , 2017 , 19 (45) : 30332-30338 .
MLA Ye, H. G. et al. "Role of free electrons in phosphorescence in n-type wide bandgap semiconductors" . | PHYSICAL CHEMISTRY CHEMICAL PHYSICS 19 . 45 (2017) : 30332-30338 .
APA Ye, H. G. , Su, Z. C. , Tang, F. , Chen, G. D. , Wang, Jian , Xu, Ke et al. Role of free electrons in phosphorescence in n-type wide bandgap semiconductors . | PHYSICAL CHEMISTRY CHEMICAL PHYSICS , 2017 , 19 (45) , 30332-30338 .
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Exploring Emerging Photovoltaic Materials Beyond Perovskite: The Case of Skutterudite EI SCIE Scopus
期刊论文 | 2017 , 29 (21) , 9429-9435 | CHEMISTRY OF MATERIALS | IF: 9.89
WoS CC Cited Count: 3
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Because of the stability and toxic issue of CH3NH3PbI3, great efforts have been made to search emerging materials beyond perovskite. Most of the explorations are based on ns(2)-containing compounds, because lone-pair s-orbital-derived antibonding states are believed to play a crucial role in unique properties of CH3NH3PbI3. In this work, we chose skutterudite-structure IrSb3 (Eg approximate to 1.3 eV) as a case study to show that the strong antibonding character at valence band maximum (VBM) can appear without the contribution from lone-pair s orbital. First-principles calculations show that IrSb3 possesses similar electronic properties as CH3NH3PbI3: (i) ambipolar conductivity with much better electron and hole effective masses than that of CH(3)NH(3)PbI3; (ii) strong optical absorption (similar to 1 X 10(4) cm(-1)); (iii) shallow dominating defects. More importantly, IrSb3 is much more stable than CH3NH3PbI3. Our work may shed light on searching new promising solar cell materials beyond ns(2)P-containing perovskite.

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GB/T 7714 Yin, Yuan , Huang, Yang , Wu, Yelong et al. Exploring Emerging Photovoltaic Materials Beyond Perovskite: The Case of Skutterudite [J]. | CHEMISTRY OF MATERIALS , 2017 , 29 (21) : 9429-9435 .
MLA Yin, Yuan et al. "Exploring Emerging Photovoltaic Materials Beyond Perovskite: The Case of Skutterudite" . | CHEMISTRY OF MATERIALS 29 . 21 (2017) : 9429-9435 .
APA Yin, Yuan , Huang, Yang , Wu, Yelong , Chen, Guangde , Yin, Wan-Jian , Wei, Su-Huai et al. Exploring Emerging Photovoltaic Materials Beyond Perovskite: The Case of Skutterudite . | CHEMISTRY OF MATERIALS , 2017 , 29 (21) , 9429-9435 .
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Modulation instability of a spin-1 Bose-Einstein condensate with spin-orbit coupling EI SCIE Scopus
期刊论文 | 2017 , 50 (23) | JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS | IF: 2.119
WoS CC Cited Count: 1 SCOPUS Cited Count: 1
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We investigate the modulation instability (MI) of plane-wave states in a spin-orbit-coupled spin-1 Bose-Einstein condensate (BEC). The MI of the system can be adjusted by the intensities of the spin-orbit coupling (SOC), Raman coupling and atom-atom interactions. Our analysis shows that the MI of a system without the SOC and Raman coupling mainly occurs for repulsive density-density and spin-exchange interactions due to the combined effects coming from both of them. But when considering the SOC, a multi-peak structure appears in the momentum distribution for the instability, which may be thought of as a precursor to the generation of the stripe-type nonlinear excitations in such systems. The MI becomes more remarkable with increasing intensity of Raman coupling. In addition, the SOC inevitably contributes to the instability for the ternary superfluid regardless of the nature of the density-density and spin-exchange interactions.

Keyword :

spinor gases Bose-Einstein condensate modulation instability spin-orbit coupling

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GB/T 7714 Li, Guan-Qiang , Chen, Guang-De , Peng, Ping et al. Modulation instability of a spin-1 Bose-Einstein condensate with spin-orbit coupling [J]. | JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS , 2017 , 50 (23) .
MLA Li, Guan-Qiang et al. "Modulation instability of a spin-1 Bose-Einstein condensate with spin-orbit coupling" . | JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS 50 . 23 (2017) .
APA Li, Guan-Qiang , Chen, Guang-De , Peng, Ping , Li, Zhi , Bai, Xiao-Dong . Modulation instability of a spin-1 Bose-Einstein condensate with spin-orbit coupling . | JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS , 2017 , 50 (23) .
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