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Author:

Song, Zhongxiao (Song, Zhongxiao.) | Wang, Jianfeng (Wang, Jianfeng.) | Li, Yanhuai (Li, Yanhuai.) | Xu, Kewei (Xu, Kewei.) | Liu, Chunliang (Liu, Chunliang.) (Scholars:刘纯亮)

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CPCI-S Scopus

Abstract:

To investigate the aging process of AC PDPs manufacturing, Mg-Zr-O protective films were deposited on glass substrates by magnetron sputtering method, and made into macroscopic discharging cells. The aging of discharge cells was accomplished with different time, and discharging voltages (the firing voltage and the minimum sustaining voltage) of them were measured. Results reveal that the firing voltage V-f and the minimum sustain voltage V-s are reduced by about 18V and 10V in the initial aging process (0 similar to 20 min) respectively, then tend to be constant as the aging time increases further. The XPS measurement suggests the density of states for valence band rises with the increase of aging time from 0 to 20min, while valence band edge is slightly shifted to a low binding state. When the aging time exceeds 20min, the electron structure tends to be in a stable condition gradually. Similar behavior is observed in both the relative intensity of (200) preferred orientation to (220) observed by XRD and surface toughness detected by AFM. The transformation of microstructure was observed. (C) 2012 Published by Elsevier B. V. Selection and/or peer review under responsibility of Chinese Vacuum Society (CVS).

Keyword:

aging alternating current plasma display panel (AC PDP) Mg-Zr-O microstructure

Author Community:

  • [ 1 ] [Song, Zhongxiao; Wang, Jianfeng; Li, Yanhuai; Xu, Kewei] Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
  • [ 2 ] [Liu, Chunliang] Xi An Jiao Tong Univ, Minist Educ, Key Lab Elect Phys, Xian 710049, Peoples R China

Reprint Author's Address:

  • Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China.

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Source :

18TH INTERNATIONAL VACUUM CONGRESS (IVC-18)

ISSN: 1875-3892

Year: 2012

Volume: 32

Page: 814-821

Language: English

Cited Count:

WoS CC Cited Count: 1

SCOPUS Cited Count: 2

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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