We　studied　local　segregation　of　impurities,　including　boron,　phosphorus　and　oxygen,　at　an　interface　between　the　melt　and　crystal　during　crystal　growth　of　silicon　with　transverse　magnetic　fields.　A　three-dimensional　global　model　that　included　local　segregation　based　on　local　growth　rate　was　used　in　this　study.　It　was　found　that　the　distributions　of　boron　and　phosphorus　at　an　interface　become　a　saw-toothlike　pattern　in　the　case　of　a　small　crystal　rotation　rate,　while　the　distribution　of　oxygen　concentration　was　almost　the　same　at　different　crystal　rotation　rates.　The　distributions　of　boron　and　phosphorus　were　determined　by　segregation.　However,　the　oxygen　concentration　fields　in　the　melt　and　the　crystal　are　primarily　influenced　by　the　evaporation　of　oxygen　from　the　melt　surface　and　its　incorporation　into　the　melt　from　the　crucible　wall,　rather　than　from　the　segregation　dynamics　at　the　melt/crystal　interface.　(C)　2009　Elsevier　B.V.　All　rights　reserved.