The　continuous-feeding　Czochralski　method　is　an　effective　method　to　reduce　the　cost　of　single　crystal　silicon.　By　promoting　the　crystal　growth　rate,　the　cost　can　be　reduced　further.　However,　more　latent　heat　will　be　released　at　the　melt-crystal　interface　under　a　high　crystal　growth　rate.　In　this　study,　a　water-cooled　jacket　was　applied　to　enhance　the　heat　transfer　at　the　melt-crystal　interface.　Quasi-steady-state　numerical　calculation　was　employed　to　investigate　the　impact　of　the　water-cooled　jacket　on　the　heat　transfer　at　the　melt-crystal　interface.　Latent　heat　released　during　the　crystal　growth　process　at　the　melt-crystal　interface　and　absorbed　during　feedstock　melting　at　the　feeding　zone　was　modeled　in　the　simulations.　The　results　show　that,　by　using　the　water-cooled　jacket,　heat　transfer　in　the　growing　crystal　is　enhanced　significantly.　Melt-crystal　interface　deflection　and　thermal　stress　increase　simultaneously　due　to　the　increase　of　radial　temperature　at　the　melt-crystal　interface.　With　a　modified　heat　shield　design,　heat　transfer　at　the　melt-crystal　interface　is　well　controlled.　The　crystal　growth　rate　can　be　increased　by　20%.