(Pb0.92La0.08)(Zr0.65Ti0.35)O-3　(PLZT),　PbZrO3　(PZO)　films,　and　type　A　and　type　B　PLZT/PZO　multilayer　thin　films　were　deposited　on　Pt(111)/TiOx/SiO2/Si　substrates　by　sol-gel　method,　where　type　A　and　type　B　films　stand　for　PLZT/PZO/PLZT/PZO/PLZT/PZO　and　PLZT/PZO/PLZT/PLZT/PZO/PLZT　multilayer　thin　film,　respectively.　Compared　to　the　PLZT　and　PZO　film,　enhanced　breakdown　field　strength　and　improved　energy　storage　density　were　obtained　in　type　A　and　B　multilayer　thin　films.　A　superior　energy　storage　density　of　29.7　J/cm(3)　with　the　energy　storage　efficiency　of　50.8%　was　achieved　in　type　B　multilayer　thin　film,　corresponding　to　81%　enhancement　compared　with　the　energy　storage　density　of　PLZT　films　(16.4　J/cm(3)).　Additionally,　the　type　B　multilayer　thin　film　exhibits　a　good　thermal　stability　up　to　160　degrees　C　and　excellent　fatigue　endurance　after　10(7)　charging-discharging　cycles.　The　enhanced　energy　storage　performance　of　type　B　multilayer　thin　film　shows　promise　and　may　stimulate　further　researches　on　energy　storage　applications　of　multilayer　dielectric　thin　films.