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Author:

Li, Jie (Li, Jie.) | Pang, Lei (Pang, Lei.) | He, Kun (He, Kun.) | Zhang, Lisong (Zhang, Lisong.)

Indexed by:

SCIE EI

Abstract:

It is an important way by detecting SF6 decomposition products to evaluate the insulation condition of SF6 insulated power equipment. In this paper, N-3&Ni doped 555-777graphene (N-3&Ni-graphene) is proposed as a new gas sensor to detect the characteristic components of SF6 decomposition products: H2S, SO2, SOF2 and SO2F2. In order to get insights into the gas sensing mechanism, the geometry structures, electron structures and conductivity are analyzed by simulation method based on density functional theory. The calculation results show that N-3&Ni dopant can improve the conductivity and surface activity of 555-777graphene. Specifically, H2S and SO2 absorbing on N-3&Ni-graphene surface will increase the conductivity obviously, while the other two kinds of gas molecules will decrease the conductivity. The sensitivity of H2S is greater than SO2 according to the changed value of energy gap. It is also indicated that N-3&Ni-graphene can absorb the above four characteristic components stably with high adsorption energies, complex orbital hybridizations and multi-level charge transfer. This work will provide some theoretical guidance to develop a novel gas sensor to evaluate the insulation condition of SF6 insulated equipment.

Keyword:

DFT calculations N-3&amp Ni-graphene gas sensor SF6 decomposition components surface adsorption

Author Community:

  • [ 1 ] [Li, Jie; Pang, Lei; Zhang, Lisong] Xi An Jiao Tong Univ, Sch Elect Engn, Xian 710049, Peoples R China
  • [ 2 ] [He, Kun] China Elect Power Res Inst, Beijing 100192, Peoples R China

Reprint Author's Address:

  • [Pang, Lei]School of Electrical Engineering, Xi'an Jiaotong University, Xi'an; 710049, China;;

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Source :

IEEE ACCESS

ISSN: 2169-3536

Year: 2019

Volume: 7

Page: 145567-145573

3 . 7 4 5

JCR@2019

3 . 3 6 7

JCR@2020

JCR Journal Grade:2

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 2

SCOPUS Cited Count: 7

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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