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Author:

Dai, Liyan (Dai, Liyan.) | Niu, Gang (Niu, Gang.) | Zhao, Jinyan (Zhao, Jinyan.) | Zhao, Huifeng (Zhao, Huifeng.) | Liu, Yiwei (Liu, Yiwei.) | Wang, Yankun (Wang, Yankun.) | Zhang, Yijun (Zhang, Yijun.) | Wu, Heping (Wu, Heping.) | Wang, Lingyan (Wang, Lingyan.) | Pfützenreuter, Daniel (Pfützenreuter, Daniel.) | Schwarzkopf, Jutta (Schwarzkopf, Jutta.) | Dubourdieu, Catherine (Dubourdieu, Catherine.) | Schroeder, Thomas (Schroeder, Thomas.) | Ye, Zuo-Guang (Ye, Zuo-Guang.) | Xie, Ya-Hong (Xie, Ya-Hong.) | Ren, Wei (Ren, Wei.) (Scholars:任巍)

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Abstract:

Future 'Internet of Things' requires transferable ferroelectric thin films for functional devices like sensors and actuators. We report here the growth of a typical ferroelectric perovskite compound, BaTiO3, on a graphene monolayer which remains intact during the oxide growth process at high temperatures and at elevated oxygen pressure. The graphene facilitates the crystallization of BaTiO3. The growth of BaTiO3 on the graphene monolayer is found to follow the Volmer-Weber mode with the formation of three dimensional islands at the initial growth stage. Highly (001)-oriented BaTiO3 crystalline films are fabricated and can be easily exfoliated using a metal stressor layer. The graphene monolayer remains attached to the exfoliated BaTiO3 film which demonstrates good piezoelectric properties. These results not only demonstrate the possibility to fabricate high quality crystalline ferroelectric films via a graphene monolayer, but also open the pathway to realize van der Waals epitaxy ferroelectric films which can be transferred onto arbitrary substrates, particularly onto flexible substrates for wearable devices applications. This journal is © The Royal Society of Chemistry.

Keyword:

Barium titanate Ferroelectric films Ferroelectricity Ferroelectric thin films Graphene Monolayers Perovskite Thin films Van der Waals forces

Author Community:

  • [ 1 ] [Dai, Liyan]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'An Jiaotong University, Xi'an; 710049, China
  • [ 2 ] [Niu, Gang]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'An Jiaotong University, Xi'an; 710049, China
  • [ 3 ] [Zhao, Jinyan]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'An Jiaotong University, Xi'an; 710049, China
  • [ 4 ] [Zhao, Huifeng]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'An Jiaotong University, Xi'an; 710049, China
  • [ 5 ] [Liu, Yiwei]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'An Jiaotong University, Xi'an; 710049, China
  • [ 6 ] [Wang, Yankun]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'An Jiaotong University, Xi'an; 710049, China
  • [ 7 ] [Zhang, Yijun]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'An Jiaotong University, Xi'an; 710049, China
  • [ 8 ] [Wu, Heping]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'An Jiaotong University, Xi'an; 710049, China
  • [ 9 ] [Wang, Lingyan]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'An Jiaotong University, Xi'an; 710049, China
  • [ 10 ] [Pfützenreuter, Daniel]Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, Berlin; 12489, Germany
  • [ 11 ] [Schwarzkopf, Jutta]Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, Berlin; 12489, Germany
  • [ 12 ] [Dubourdieu, Catherine]Helmholtz Zentrum Berlin für Materialien und Energie, Institute IFOX, Hahn-Meitner Platz 1, Berlin; 14109, Germany; Freie Universität Berlin, Physical Chemistry, Arnimallee 22, Berlin; 14195, Germany
  • [ 13 ] [Schroeder, Thomas]Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, Berlin; 12489, Germany
  • [ 14 ] [Ye, Zuo-Guang]Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby; BC; V5A 1S6, Canada
  • [ 15 ] [Xie, Ya-Hong]Department of Materials Science and Engineering, University of California, Los Angeles; CA; 90095, United States
  • [ 16 ] [Ren, Wei]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'An Jiaotong University, Xi'an; 710049, China

Reprint Author's Address:

  • [Niu, Gang]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'An Jiaotong University, Xi'an; 710049, China;;

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Source :

Journal of Materials Chemistry C

ISSN: 2050-7534

Year: 2020

Issue: 10

Volume: 8

Page: 3445-3451

7 . 3 9 3

JCR@2020

7 . 3 9 3

JCR@2020

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:84

JCR Journal Grade:4

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 5

SCOPUS Cited Count: 13

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 9

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