With　the　rapid　development　of　advanced　electronic　devices　towards　miniaturization　and　integration,　silicon　integrated　lead-free　ferroelectric　film　capacitors　have　attracted　extensive　attention　due　to　their　excellent　energy　storage　performance　and　fast　charge/discharge　speed.　In　this　study,　the　BaZr0.15Ti0.85O3　(BZT15)　film　capacitors　have　been　epitaxially　integrated　on　Si　(0　0　1)　substrate　with　the　buffer　layers　of　Graphene/La0.67Sr0.33MnO3/CeO2/Y2O3-stabilized　ZrO2　(G/L-C-Y).　The　highly　epitaxial　crystalline　quality　improves　significantly　the　energy　storage　performance.　The　layer　of　G　has　been　found　to　further　improve　the　high　temperature　energy　storage　performance　due　to　its　heat　dissipation　effect.　The　energy　storage　density　(Wre)　of　the　BZT15　film　capacitor　with　the　buffer　layers　reaches　112.35　J/cm3　with　energy　storage　efficiency　(η)　of　76.7　%　at　room　temperature,　which　is　about　55.29　%　and　9.18　%　higher　than　that　of　the　BZT15　film　capacitor　without　buffer　layers,　respectively.　Moreover,　the　BZT15　film　capacitor　with　the　buffer　layer　shows　an　ultra-high　Wre　of　70.36　J/cm3　and　an　ultra-high　η　of　81.22　%　at　200　°C,　which　are　74.55　%　and　17.13　%　higher　than　that　of　BZT15　film　capacitor　without　buffer　layer.　More　importantly,　the　fluctuation　of　Wre　and　η　of　optimized　BZT15　film　capacitor　is　only　8.85　%　and　1.30　%　in　the　wide　temperature　range　from　−100　to　200　°C,　respectively.　Our　studies　provide　an　effective　multi-strategy　approach　combining　interface　designing　and　thermal　management　for　the　epitaxially　integration　of　dielectric　film　capacitors　on　Si　substrates　to　obtain　ultra-high　energy　storage　performance　in　ultra-wide　working　temperature.　©　2022　Elsevier　B.V.