Bias-stress stability and radiation response of solution-processed AlOx dielectrics investigated by on-site measurements - Details

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Abstract：

In　this　work,　the　effects　of　biased　irradiation　on　solution-processed　and　atomic　layer　deposited　(ALD)　AlOx　thin　films　MOS　capacitors　were　investigated　by　an　on-site　technique.　The　devices　were　irradiated　by　a　662-KeV　Cs137　γ-ray　radiation　source　under　different　positive/negative　gate　biases.　The　radiation　time　was　up　to　105　s　and　the　total　dose　was　around　92　Gy.　It　has　been　found　that　radiation　could　result　in　reversibility　of　flat-band　voltage　shifts　(ΔVFB)　of　solution-processed　AlOx　MOS　capacitors,　which　were　further　analyzed　through　calculating　the　radiation　induced　oxide　traps　(ΔNot)　in　AlOx　thin　film　and　interface　traps　at　AlOx/Si　interface　(ΔNit).　Additionally,　solution-processed　AlOx　MOS　capacitors　exhibit　more　radiation　induced　charges　compared　to　those　fabricated　by　ALD,　which　indicates　that　solution-processed　AlOx　thin　films　contain　abundant　precursor　impurities　and　bonded　oxygen.　©　2019　Elsevier　B.V.

Keyword：

Aluminum compounds Atomic layer deposition Dielectric devices Dielectric materials Gamma rays Gate dielectrics High-k dielectric MOS capacitors Silicon compounds Solution mining Thin film circuits Thin films

Author Community：

[ 1 ] [Fang, Y.X.]Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou, China; Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, United Kingdom
[ 2 ] [Zhao, C.]Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou, China; Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, United Kingdom
[ 3 ] [Mitrovic, I.Z.]Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, United Kingdom
[ 4 ] [Hall, S.]Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, United Kingdom
[ 5 ] [Yang, L.]Department of Chemistry, Xi'an Jiaotong-Liverpool University, Suzhou; 215123, China; Department of Chemistry, University of Liverpool, Liverpool; L69 7ZD, United Kingdom
[ 6 ] [Zhao, C.Z.]Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou, China; Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, United Kingdom

Reprint Author's Address：

[Zhao, C.]Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou, China;;[Zhao, C.]Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, United Kingdom;;[Zhao, C.Z.]Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou, China;;[Zhao, C.Z.]Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, United Kingdom;;

Email：

Chun.Zhao@xjtlu.edu.cn

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Related Keywords：

Aqueous solution-processed AlOx dielectrics and their biased radiation response investigated by an on-site technique
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Source ：

Microelectronic Engineering

ISSN： 0167-9317

Year： 2019

Volume： 217

2 . 3 0 5

JCR@2019

2 . 5 2 3

JCR@2020

ESI Discipline： ENGINEERING;

ESI HC Threshold：83

JCR Journal Grade：2

CAS Journal Grade：4

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count： 1

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 8

Affiliated Colleges：

电气工程学院电机电器及其控制系

理学院（原）大学化学系

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