The　effect　of　annealing　temperature　on　the　properties　of　aqueous　solution-processed　AlOx　thin　films　is　reported　in　this　paper.　Specifically,　the　stability　of　AlOx　based　Metal　Oxide　Semiconductor　(MOS)　capacitor　devices　under　bias-stress　(BS)　and　biased　radiation　stress　(BRS)　were　assessed　by　an　on-site　technique　with　bias　stress　time　up　to　105　s.　A　662-keV　Cs137　γ-ray　radiation　source　was　used,　with　circa　92　Gy,　for　biased　radiation　stress　experiments.　In　order　to　better　understand　the　origin　of　degradation　mechanisms,　the　build-up　of　charge　and　generation　of　defects　during　the　BS　and　BRS　were　analyzed　by　calculation　of　the　variation　of　oxide　trap　density　(ΔNot)　in　AlOx　bulk　and　interface　trap　density　(ΔNit)　at　the　oxide/semiconductor　interface.　It　is　been　found　that　high　annealing　temperature　(＞250　°C)　can　result　in　the　formation　of　AlOx　thin　films　with　reduced　impurities,　low　leakage　current,　and　satisfactory　BS　as　well　as　BRS　stability.　The　results　of　ΔNot　and　ΔNit　vs　stress　time　indicate　that　AlOx　bulk　oxide　traps　dominate　the　shift　of　flat-band　voltage　(VFB)　under　BRS.　Furthermore,　ΔNot　and　ΔNit　decrease　slightly　under　positive　biased　radiation　stress　(PBRS),　while　the　increase　in　ΔNot　and　ΔNit　concentrations　observed　under　negative　biased　radiation　stress　(NBRS),　exhibits　a　mechanism　which　differs　from　the　traditional　two-stage　process　theory.　©　2019　Elsevier　Ltd