Development of GaN Monolithic Integrated Circuits for Power Conversion - Details

Author：

Liang, Yung C. (Liang, Yung C..) | Sun, Ruize (Sun, Ruize.) | Yeo, Yee-Chia (Yeo, Yee-Chia.) | Zhao, Cezhou (Zhao, Cezhou.)

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Abstract：

This　paper　describes　the　development　of　a　viable　platform　for　the　design　of　full　GaN　(Gallium　Nitride)　monolithic　integrated　circuits　for　power　conversion　applications.　The　Normally-on　and　normally-off　AlGaN/GaN　power　HEMT　devices　are　used　for　the　integrated　circuit　design　using　the　ADS　(Advanced　Design　System)　tool.　A　monolithic　switched-mode　DC-DC　buck　converter　with　integrated　functional　blocks　and　over-current　protection　is　used　to　showcase　the　suitability　of　the　development.　The　designed　GaN　power　integrated　circuit　was　fully　fabricated　and　tested　to　verify　its　functionality　in　power　conversion.　©　2019　IEEE.

Keyword：

Aluminum gallium nitride DC-DC converters Electric inverters Gallium nitride III-V semiconductors Integrated circuit design Integrated circuit manufacture Monolithic integrated circuits Power integrated circuits Timing circuits

Author Community：

[ 1 ] [Liang, Yung C.]National University of Singapore, Singapore, Singapore; National University of Singapore (Suzhou) Research Institute, China
[ 2 ] [Sun, Ruize]National University of Singapore, Singapore, Singapore; National University of Singapore (Suzhou) Research Institute, China
[ 3 ] [Yeo, Yee-Chia]National University of Singapore, Singapore, Singapore
[ 4 ] [Zhao, Cezhou]Xi'an Jiaotong-Liverpool University, China

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Related Keywords：

Development of GaN Power IC Platform and All GaN DC-DC Buck Converter IC
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Source ：

ISSN： 0886-5930

Year： 2019

Volume： 2019-April

Language： English

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count： 10

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 10

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