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Author:

Wu, Yifei (Wu, Yifei.) | Zhang, Zhihui (Zhang, Zhihui.) | Liu, Wentao (Liu, Wentao.) | Wu, Yi (Wu, Yi.) | Rong, Mingzhe (Rong, Mingzhe.) | Yang, Fei (Yang, Fei.) | Shi, Nan (Shi, Nan.) | Zeng, Lincui (Zeng, Lincui.)

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Abstract:

Hybrid DC circuit breaker (HDCCB) has the advantages of low on-state loss and fast breaking speed, so it is an important development direction in the field of DC breaking. The integrated gate commutated thyristor (IGCT) has the advantages of low on-state voltage, fast turn-off speed and strong anti-surge capability, so it is suitable for power electronic switch which is the core breaking component of the HDCCB. In this paper, a parallel IGCTs module as the power electronic switch in a HDCCB is designed. The fundamental principle of current sharing of parallel IGCTs is analyzed. A test platform is set up to investigate the influencing factors of current sharing of parallel IGCTs, including electrical characteristics of IGCTs, clamping force, current rise rate and current amplitude. Finally, the conclusion of the current sharing characteristics of parallel IGCTs under different factors is obtained by tests. © 2019 IEEE.

Keyword:

Clamping devices Electric circuit breakers Semiconductor switches Thyristors Timing circuits

Author Community:

  • [ 1 ] [Wu, Yifei]Xi'an Jiaotong University, State Key Lab of Electrical Insulation and Power Equipment, Xi'an; 710049, China
  • [ 2 ] [Zhang, Zhihui]Xi'an Jiaotong University, State Key Lab of Electrical Insulation and Power Equipment, Xi'an; 710049, China
  • [ 3 ] [Liu, Wentao]Xi'an Jiaotong University, State Key Lab of Electrical Insulation and Power Equipment, Xi'an; 710049, China
  • [ 4 ] [Wu, Yi]Xi'an Jiaotong University, State Key Lab of Electrical Insulation and Power Equipment, Xi'an; 710049, China
  • [ 5 ] [Rong, Mingzhe]Xi'an Jiaotong University, State Key Lab of Electrical Insulation and Power Equipment, Xi'an; 710049, China
  • [ 6 ] [Yang, Fei]Xi'an Jiaotong University, State Key Lab of Electrical Insulation and Power Equipment, Xi'an; 710049, China
  • [ 7 ] [Shi, Nan]Xi'an XD High Voltage Apparatus Co. Ltd, Xi'an; 710018, China
  • [ 8 ] [Zeng, Lincui]Xi'an XD High Voltage Apparatus Co. Ltd, Xi'an; 710018, China

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Year: 2019

Page: 324-328

Language: English

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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