Series-connection　of　silicon　carbide　(SiC)-MOSFETs　is　an　attractive　method　to　achieve　a　high-voltage　and　fast-switching　power　semiconductor　switch.　In　order　to　deal　with　the　unequal　voltage　sharing　problem　in　such　series　connection　method,　a　novel　active　voltage　clamping　circuit　topology　is　proposed　in　this　letter.　The　maximum　drain　source　voltages　of　the　series-connected　SiC-MOSFETs　are　clamped　by　individual　clamping　capacitors;　therefore,　high　reliable　switching　of　the　power　semiconductors　is　guaranteed.　Besides,　the　accumulated　energy　in　the　clamping　capacitors　can　be　actively　transferred　back　into　the　power　supply　through　a　simple　gate　drive　signal　adjustment　algorithm;　thus,　the　induced　clamping　circuit　loss　can　be　effectively　suppressed.　The　proposed　active　clamping　topology　has　been　experimentally　verified　in　a　half-bridge　inverter　with　four　SiC-MOSFETs　connected　in　series.　©　2021　Institute　of　Electrical　and　Electronics　Engineers　Inc..　All　rights　reserved.