The　interface　defects　caused　by　lattice　mismatch　between　semiconductors　and　the　homogeneous　doping　of　dopants　in　host　semiconductors　without　layered　structure　are　the　challenges　in　the　construction　of　high　performance　photocatalysts.　Herein,　a　smart　template　induced　in-situ　growth　method　is　developed　to　synthesize　a　quantum　dot　level　Cu&In　co-doped　CdS　(CuIn-CdS)　hetero-phase　junction　with　multi-arm　nanorod　morphology　for　the　first　time.　Due　to　the　in-situ　growth　of　CdS　induced　by　Cu-doped　In2S3　nanorods,　the　homogeneous　doping　of　Cu　and　In　in　CdS　is　easily　realized,　which　efficiently　expands　the　light　absorption　ability　of　CdS.　Moreover,　owing　to　the　hetero-phase　junction　formed　between　hexagonal　and　cubic　CdS　rather　than　heterostructure,　the　lattice　mismatch　and　the　interface　defects　are　greatly　minimized,　which　effectively　facilitates　the　separation　and　transfer　of　photogenerated　charge　carriers.　As　a　result,　the　optimal　CuIn-CdS　exhibits　a　photocatalytic　H2　evolution　rate　of　105.44　mmol/g/h　(corresponding　to　the　apparent　quantum　efficiency　(AQE)　of　32.72%　at　400　nm),　which　is　about　55.0,　10.9　and　9.7　times　higher　than　that　of　pristine　CdS,　Cu-CdS　and　In-CdS,　respectively.　This　work　provides　a　new　way　to　overcome　interface　defects　and　realize　homogeneous　doping　at　the　same　time　for　exploring　new　photocatalysts　with　high　performance.　©　2020　Elsevier　B.V.