Dual-site　lattice　doping　in　semiconductor　materials　is　highly　promising　for　photocatalysis　as　it　can　tune　the　sub-band　electronic　structure　and　charge　distribution　of　the　photocatalyst.　However,　it　is　challenging　to　precisely　regulate　the　band　structure　by　dual-site　doping　using　the　same　heteroatom.　Herein,　we　report　the　homogeneous　dual-site　P　lattice　doping　in　CdS　quantum　rods,　i.e.　P　is　homogeneously　doped　into　both　substitutional　site　of　S　and　interstitial　site,　leading　to　negative　shift　of　valence　and　conduction　bands　with　extraordinary　visible-light　excitation　efficiency.　The　electrons　generated　in　the　newly　designed　photocatalyst　have　strong　redox　potential　in　reducing　H+　into　H2　in　photocatalysis.　By　introducing　nontrivial　co-catalyst　Ni3C　quantum　dots　onto　the　surface　of　P-CdS　quantum　rods,　the　apparent　quantum　efficiency　of　the　catalyst　achieves　15.7%　at　435　nm,　which　is　5　times　higher　than　that　of　pristine　CdS.　©　2021　Elsevier　Ltd