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Author:

Jin, Li (Jin, Li.) | Huang, Yunyao (Huang, Yunyao.) | Pang, Jing (Pang, Jing.) | Zhang, Leiyang (Zhang, Leiyang.) | Jing, Ruiyi (Jing, Ruiyi.) | Guo, Dong (Guo, Dong.) | Du, Hongliang (Du, Hongliang.) | Wei, Xiaoyong (Wei, Xiaoyong.) | Xu, Zhuo (Xu, Zhuo.) | Lu, Xu (Lu, Xu.) | Wei, Fangbin (Wei, Fangbin.) | Liu, Gang (Liu, Gang.)

Indexed by:

EI SCIE Scopus Engineering Village

Abstract:

Zr-substituted (Bi0.5Na0.5)(Ti1−xZrx)O3 (BNTZ) with x = 0.02–0.4 ceramics were prepared using solid-state reaction technique and their structural, dielectric and ferroelectric properties were investigated systematically. X-ray diffraction results suggest that Zr4+ ion can enter the (Bi0.5Na0.5)TiO3 (BNT) crystal lattices at a limited value and a secondary phase appears in BNTZ ceramics when the x exceeds 0.1. Temperature-dependent dielectric permittivities of BNTZ ceramics show only one dielectric peak from room temperature to 500 °C for each composition, and this dielectric peak becomes broad gradually as x increases from 0.02 to 0.4. The permittivity of x = 0.4 varies less than ±10% between room temperature and 300 °C, indicating a superior thermal stability of the permittivity. Polarization enhancement is revealed by the polarization-electric field hysteresis loops and highest ferroelectric properties are obtained in x = 0.04. The electric-field-induced strains of x = 0.04 show a monotonous increase as temperature increases from 30 °C to 150 °C. At 80 kV/cm, a high strain level of 0.268% is achieved. Our results suggest that the introduction of Zr4+ ion could effectively tailor the dielectric and ferroelectric properties of BNT ceramics and x = 0.4 composition could find potential application in high temperature capacitor devices. © 2020 Elsevier Ltd and Techna Group S.r.l.

Keyword:

Bismuth compounds Electric fields Ferroelectric ceramics Ferroelectricity Permittivity Polarization Sodium compounds Solid state reactions Strain Thermodynamic stability Zirconium compounds

Author Community:

  • [ 1 ] [Jin, Li]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 2 ] [Huang, Yunyao]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 3 ] [Pang, Jing]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 4 ] [Zhang, Leiyang]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 5 ] [Jing, Ruiyi]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 6 ] [Guo, Dong]School of Medical Instrument & Food Engineering, University of Shanghai for Science & Technology, Shanghai; 200093, China
  • [ 7 ] [Du, Hongliang]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 8 ] [Wei, Xiaoyong]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 9 ] [Xu, Zhuo]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 10 ] [Lu, Xu]Laboratory of Functional Films, School of Materials Science and Engineering, Xi'an University of Technology, Xi'an; 710048, China
  • [ 11 ] [Wei, Fangbin]School of Materials and Energy, Southwest University, Chongqing; 400715, China
  • [ 12 ] [Liu, Gang]School of Materials and Energy, Southwest University, Chongqing; 400715, China

Reprint Author's Address:

  • [Jin, Li]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China;;

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Source :

Ceramics International

ISSN: 0272-8842

Year: 2020

Issue: 14

Volume: 46

Page: 22889-22899

4 . 5 2 7

JCR@2020

4 . 5 2 7

JCR@2020

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:84

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 10

SCOPUS Cited Count: 18

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 12

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