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Author:

Xu, Xinwei (Xu, Xinwei.) | Hu, Renchao (Hu, Renchao.) | Chen, Meiyu (Chen, Meiyu.) | Dong, Jiufeng (Dong, Jiufeng.) | Xiao, Bin (Xiao, Bin.) | Wang, Qing (Wang, Qing.) | Wang, Hong (Wang, Hong.)

Indexed by:

EI SCIE Scopus Engineering Village

Abstract:

Polymer composites with excellent thermal conductivity, low dielectric constant and low dielectric loss are urgently required for microelectronics and wireless communication systems. However, traditional thermal conductive polymer composites realized by simply adding inorganic fillers, cannot have high thermal conductivity and good electrical insulation concurrently, which greatly hinders the practical application. In this work, a facile and scalable assembly technique to construct a three-dimensional boron nitride foam (3D-BN) for the formation of 3D-BN/epoxy composites has been proposed to address this long-standing challenge. Herein we built a self-support and pressure reinforced 3D-BN foam composed of only bulk-BN microplates to serve as the thermal pathway. The obtained composite with greatly enhanced thermal conductivity enhancement (TCE) exhibits the highest through-plane thermal conductivity of 6.11 W m−1 K−1 ever reported for bulk-BN polymer composites. Further analysis by finite element simulation revealed that the high thermal conductivity is attributed to the polymer-free, pressure reinforced 3D-BN foam which serves as a more effective pathway for the phonons transmission. This work offers an easy approach and provides a new paradigm for the fabrication and design of thermal management polymers. © 2020 Elsevier B.V.

Keyword:

Boron nitride Conducting polymers Dielectric losses Filled polymers Foams III-V semiconductors Microelectronics Nitrides Reinforcement Thermal conductivity Thermal insulation

Author Community:

  • [ 1 ] [Xu, Xinwei]School of Microelectronics & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 2 ] [Xu, Xinwei]Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen; 518055, Guangdong, China
  • [ 3 ] [Xu, Xinwei]Shenzhen Engineering Research Center for Novel Electronic Information Materials and Devices, Southern University of Science and Technology, Shenzhen; 518055, Guangdong, China
  • [ 4 ] [Hu, Renchao]Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen; 518055, Guangdong, China
  • [ 5 ] [Hu, Renchao]Shenzhen Engineering Research Center for Novel Electronic Information Materials and Devices, Southern University of Science and Technology, Shenzhen; 518055, Guangdong, China
  • [ 6 ] [Chen, Meiyu]Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen; 518055, Guangdong, China
  • [ 7 ] [Chen, Meiyu]Shenzhen Engineering Research Center for Novel Electronic Information Materials and Devices, Southern University of Science and Technology, Shenzhen; 518055, Guangdong, China
  • [ 8 ] [Dong, Jiufeng]School of Microelectronics & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 9 ] [Dong, Jiufeng]Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen; 518055, Guangdong, China
  • [ 10 ] [Dong, Jiufeng]Shenzhen Engineering Research Center for Novel Electronic Information Materials and Devices, Southern University of Science and Technology, Shenzhen; 518055, Guangdong, China
  • [ 11 ] [Xiao, Bin]Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen; 518055, Guangdong, China
  • [ 12 ] [Xiao, Bin]Shenzhen Engineering Research Center for Novel Electronic Information Materials and Devices, Southern University of Science and Technology, Shenzhen; 518055, Guangdong, China
  • [ 13 ] [Wang, Qing]Materials Science and Engineering, The Pennsylvania State University, University Park; PA; 16802, United States
  • [ 14 ] [Wang, Hong]Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen; 518055, Guangdong, China
  • [ 15 ] [Wang, Hong]Shenzhen Engineering Research Center for Novel Electronic Information Materials and Devices, Southern University of Science and Technology, Shenzhen; 518055, Guangdong, China

Reprint Author's Address:

  • [Wang, Hong]Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen; 518055, Guangdong, China;;[Wang, Hong]Shenzhen Engineering Research Center for Novel Electronic Information Materials and Devices, Southern University of Science and Technology, Shenzhen; 518055, Guangdong, China;;

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Source :

Chemical Engineering Journal

ISSN: 1385-8947

Year: 2020

Volume: 397

1 3 . 2 7 3

JCR@2020

1 3 . 2 7 3

JCR@2020

ESI Discipline: ENGINEERING;

ESI HC Threshold:59

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 70

SCOPUS Cited Count: 210

ESI Highly Cited Papers on the List: 4 Unfold All

  • 2022-11
  • 2022-9
  • 2022-7
  • 2022-5

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 7

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