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Author:

Zhao, Lihua (Zhao, Lihua.) | Chen, Zhijie (Chen, Zhijie.) | Ren, Junwen (Ren, Junwen.) | Yang, Lingyu (Yang, Lingyu.) | Li, Yuchao (Li, Yuchao.) | Wang, Zhong (Wang, Zhong.) | Ning, Wenjun (Ning, Wenjun.) | Jia, Shenli (Jia, Shenli.)

Indexed by:

EI Scopus SCIE Engineering Village

Abstract:

Polymer-based dielectrics with high thermal conductivity and superb dielectric properties hold great promising for advanced electronic packaging and thermal management application. However, integrating these properties into a single material remains challenging due to their mutually exclusive physical connotations. Here, an ideal dielectric thermally conductive epoxy composite is successfully prepared by incorporating multiscale hybrid fillers of boron nitride microsphere (BNMS) and silicon dioxide coated silicon carbide nanoparticles (SiC@SiO2). In the resultant composites, the microscale BNMS serve as the principal building blocks to establish the thermally conductive network, while the nanoscale SiC@SiO2 as bridges to optimize the heat transfer and suppress the interfacial phonon scattering. In addition, the special core–shell nanoarchitecture of SiC@SiO2 can significantly impede the leakage current and generate a great deal of minicapacitors in the composites. Consequently, favorable thermal conductivity (0.76 W/mK) and dielectric constant (∼8.19) are simultaneously achieved in the BNMS/SiC@SiO2/Epoxy composites without compromising the dielectric loss (∼0.022). The strategy described in this study provides important insights into the design of high-performance dielectric composites by capitalizing on the merits of different particles. © 2022 Elsevier Inc.

Keyword:

Boron nitride Dielectric losses Electronics packaging Gallium nitride Heat transfer III-V semiconductors Low-k dielectric Microspheres Silica Silicon carbide Silicon oxides SiO2 nanoparticles Thermal conductivity

Author Community:

  • [ 1 ] [Zhao, Lihua]College of Electrical Engineering, Sichuan University, Chengdu; 610065, China
  • [ 2 ] [Chen, Zhijie]College of Electrical Engineering, Sichuan University, Chengdu; 610065, China
  • [ 3 ] [Ren, Junwen]College of Electrical Engineering, Sichuan University, Chengdu; 610065, China
  • [ 4 ] [Yang, Lingyu]State Key Lab of the Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 5 ] [Li, Yuchao]School of Materials Science and Engineering, Liaocheng University, Liaocheng; 252000, China
  • [ 6 ] [Wang, Zhong]College of Electrical Engineering, Sichuan University, Chengdu; 610065, China
  • [ 7 ] [Ning, Wenjun]College of Electrical Engineering, Sichuan University, Chengdu; 610065, China
  • [ 8 ] [Jia, Shenli]College of Electrical Engineering, Sichuan University, Chengdu; 610065, China
  • [ 9 ] [Jia, Shenli]State Key Lab of the Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 10 ] [Zhao, Lihua]Sichuan Univ, Coll Elect Engn, Chengdu 610065, Peoples R China
  • [ 11 ] [Chen, Zhijie]Sichuan Univ, Coll Elect Engn, Chengdu 610065, Peoples R China
  • [ 12 ] [Ren, Junwen]Sichuan Univ, Coll Elect Engn, Chengdu 610065, Peoples R China
  • [ 13 ] [Wang, Zhong]Sichuan Univ, Coll Elect Engn, Chengdu 610065, Peoples R China
  • [ 14 ] [Ning, Wenjun]Sichuan Univ, Coll Elect Engn, Chengdu 610065, Peoples R China
  • [ 15 ] [Jia, Shenli]Sichuan Univ, Coll Elect Engn, Chengdu 610065, Peoples R China
  • [ 16 ] [Yang, Lingyu]Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China
  • [ 17 ] [Jia, Shenli]Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China
  • [ 18 ] [Li, Yuchao]Liaocheng Univ, Sch Mat Sci & Engn, Liaocheng 252000, Shandong, Peoples R China

Reprint Author's Address:

  • [Ren, J.]Sichuan University, No. 24 South Section 1, Yihuan Road, China;;

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Source :

Journal of Colloid and Interface Science

ISSN: 0021-9797

Year: 2022

Volume: 627

Page: 205-214

8 . 1 2 8

JCR@2020

ESI Discipline: CHEMISTRY;

ESI HC Threshold:6

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 53

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 13

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