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Author:

Wang, Dawei (Wang, Dawei.) | Fan, Zhongming (Fan, Zhongming.) | Rao, Guanghui (Rao, Guanghui.) | Wang, Ge (Wang, Ge.) | Liu, Yao (Liu, Yao.) | Yuan, Changlai (Yuan, Changlai.) | Ma, Tao (Ma, Tao.) | Li, Dejun (Li, Dejun.) | Tan, Xiaoli (Tan, Xiaoli.) | Lu, Zhilun (Lu, Zhilun.) | Feteira, Antonio (Feteira, Antonio.) | Liu, Shiyu (Liu, Shiyu.) | Zhou, Changrong (Zhou, Changrong.) | Zhang, Shujun (Zhang, Shujun.)

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Abstract:

Following increased environmental concerns on the toxicity of lead, the discovery of ultrahigh piezoelectricity in lead-free piezoelectric materials is critical for the substitution of commercial lead zirconate titanate (PZT) ceramics in numerous electronic devices. In this work, a synergistic design strategy is proposed to enhance the piezoelectricity in lead-free piezoelectric materials by flattening the Gibbs free energy density profile, via the coexistence of multiple phases and local structural heterogeneity. This strategic material design approach is based on first-principles calculations combined with Landau phenomenological theory and phase field simulations. Sustainable Stannum-doped BaTiO3 lead-free ferroelectric ceramics are prepared to validate our proposed mechanism, and a giant piezoelectric coefficient d33 > 1100 pC/N is achieved, being the highest value reported in lead-free piezoceramics. The mechanism and paradigm of the excellent piezoelectricity achieved here provides a feasible solution for replacing lead-based piezoelectrics by lead-free counterparts. © 2020

Keyword:

Barium titanate Calculations Crystallography Ferroelectric ceramics Free energy Gibbs free energy Lead zirconate titanate Piezoelectric ceramics Piezoelectric devices Piezoelectricity Piezoelectric materials

Author Community:

  • [ 1 ] [Wang, Dawei]Department of Materials Science and Engineering, University of Sheffield, Sheffield; S1 3JD, United Kingdom
  • [ 2 ] [Fan, Zhongming]Department of Materials Science and Engineering, Iowa State University, Ames; IA; 50011, United States
  • [ 3 ] [Rao, Guanghui]Guangxi Key Laboratory of Information Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin; Guangxi; 541004, China
  • [ 4 ] [Wang, Ge]Department of Materials Science and Engineering, University of Sheffield, Sheffield; S1 3JD, United Kingdom
  • [ 5 ] [Liu, Yao]Electronic Materials Research Lab, Key Lab of Education Ministry/International Center for Dielectric Research, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an; 710049, China
  • [ 6 ] [Yuan, Changlai]Guangxi Key Laboratory of Information Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin; Guangxi; 541004, China
  • [ 7 ] [Ma, Tao]Ames Laboratory, U.S. Department of Energy, Ames; IA; 50011, United States
  • [ 8 ] [Li, Dejun]College of Physics and Materials Science, Tianjin Normal University, Tianjin; 300387, China
  • [ 9 ] [Tan, Xiaoli]Department of Materials Science and Engineering, Iowa State University, Ames; IA; 50011, United States
  • [ 10 ] [Lu, Zhilun]Department of Materials Science and Engineering, University of Sheffield, Sheffield; S1 3JD, United Kingdom
  • [ 11 ] [Feteira, Antonio]Christian Doppler Lab on Advanced Ferroic Oxides, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield; S1 1WB, United Kingdom
  • [ 12 ] [Liu, Shiyu]College of Physics and Materials Science, Tianjin Normal University, Tianjin; 300387, China
  • [ 13 ] [Zhou, Changrong]Guangxi Key Laboratory of Information Materials, School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin; Guangxi; 541004, China
  • [ 14 ] [Zhang, Shujun]Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials, University of Wollongong, Wollongong; NSW; 2500, Australia

Reprint Author's Address:

  • [Wang, Dawei]Department of Materials Science and Engineering, University of Sheffield, Sheffield; S1 3JD, United Kingdom;;

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Source :

Nano Energy

ISSN: 2211-2855

Year: 2020

Volume: 76

1 7 . 8 8 1

JCR@2020

1 7 . 8 8 1

JCR@2020

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:84

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 54

SCOPUS Cited Count: 125

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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