Anisotropic　silicon　nanocrystals　(Si　Ncs)　in　amorphous　Si1-x-yGexCy　thin　films　were　obtained　by　magnetron　sputtering　deposition　and　post-annealing　process　at　high　temperature.　The　microstructure　and　optical　properties　of　anisotropic　Si　Ncs　were　analysed　by　high-resolution　transmission　electron　microscopy,　photoluminescence　(PL)　and　UV-visible　absorption.　The　morphology　and　optical　properties　were　studied　in　this　article,　and　the　formation　mechanism　stated.　The　results　showed　that　Si　QDs　preferentially　grow　along　the　directions　with　the　lower　strain　energy,　such　as,　,　and　,　forming　polymorphic　structures.　The　polymorphic　characteristics　affected　the　energy　level　configuration　as　indicated　by　a　blue　shift.　There　were　two　PL　spectrums　at　2.57　eV　and　2.64　eV.　UV-visible　absorption　measurements　revealed　an　enhanced　absorption　in　the　energy　range　of　2.57　eV,　1.89　eV,　1.2　eV　and　0.96　eV,　which　can　be　adjusted　by　changing　RS/G.　That　was　expected　to　improve　the　amount　of　light　quantum　yield　of　photovoltaic　cell.　©　2018,　Materials　Review　Magazine.　All　right　reserved.