In2O3　nanofibers　usually　suffer　a　high　off-current　and　consequent　low　on/off　current　ratio,　as　well　as　a　large　negative　threshold　voltage　(Vth).　Furthermore,　regarding　Zn　doped　binary-cation　In2O3　nanofibers,　severe　thermal　diffusion　of　Zn　elements　can　result　in　deteriorated　electrical　performance　when　annealed　at　high　temperature.　Here,　we　applied　an　electrospinning　technique　to　obtain　ternary-cation　IAZO　nanofibers　with　controllable　Vth　and　chemical　stoichiometry.　The　presence　of　the　Al　element　in　IAZO　nanofibers　can　lead　to　more　superior　microstructure　with　improved　uniformity,　lower　surface　defect,　and　superior　metal-oxide-metal　lattice　at　high　annealing　temperature.　Consequently,　our　Al-doped　ternary-cation　IAZO　devices　exhibited　an　improved　on/off　current　ratio　of　107　and　a　high　electron　mobility　of　∼10　cm2　V-1　s-1.　Moreover,　the　electron　mobility　can　be　increased　to　30　cm2　V-1　s-1　in　our　low-voltage　operated　FETs　with　high-k　AlOx　as　the　dielectric　layer,　which　can　be　envisioned　to　exhibit　vast　implications　for　high-performance　transparent　electronics.　©　2021　American　Chemical　Society.