Indium　oxide　nanofibers　(In2O3　NFs)　are　considered　to　be　one　of　the　possible　channel　materials　for　future　electronic　devices,　however,　these　NFs　devices　suffer　from　low　on/off　current　ratio　(Ion/Ioff),　large　negative　threshold　voltage　(VTH),　and　high　leakage　current　due　to　the　excess　carriers　in　NFs.　A　facile　one-step　electrospinning　technique　is　employed　to　synthesize　metal　element　(aluminum　(Al),　chromium　(Cr)　or　gallium　(Ga))　highly-doped　In2O3　NFs　to　both　improve　the　electrical　performance　of　the　NFs　field　effect　transistors　(FETs)　and　reduce　the　consumption　of　indium.　The　devices　exhibit　optimal　performance　at　10　mol%　doping　concentration　(Al,　Cr　and　Ga):　small　and　positive　VTH　(on/Ioff　(∼108),　high　saturation　current　(∼10−4　A),　and　decent　carrier　mobility　(∼2.0　cm2/V−1s−1).　When　a　high-k　AlOx　thin-film　is　employed　as　the　gate　dielectric　for　the　NFs　FETs　(10　mol%　Al–In2O3　NFs),　the　gate　voltage　and　drain　voltage　is　reduced　to　5　V　and　3　V,　respectively,　and　the　μfe　is　increased　by　6X.　Furthermore,　10　mol%　Al–In2O3　NFs　FETs　with　enhancement-mode　operation　were　integrated　into　highly　efficient　NMOS　inverters.　All　the　results　indicate　that　the　highly　metal-doped　In2O3　NFs　have　practical　application　for　next-generation　low-cost,　large-area,　energy-efficient　and　high-performance　nanoelectronic　devices.　©　2020　Elsevier　B.V.