Wide-bandgap　devices　such　as　Gallium-Nitride　(GaN)　power　devices,　Gallium-Arsenide　(GaAs)　power　devices,　and　Silicon-Carbide　(SiC)　power　devices　have　obvious　advantages　such　as　the　switching　speed,　operation　temperature,　and　power　density　compared　with　the　counterpart　Silicon　devices.　Among　the　wide-bandgap　power　devices　mentioned　above,　the　SiC　power　devices　have　their　particular　characteristics,　such　as　high　switching　speed,　lower　switching　loss,　and　excellent　thermal　performances.　In　this　paper,　a　review　is　given　for　the　SiC　power　devices　in　terms　of　the　development　and　optimization,　short　circuit　characteristics,　and　different　protection　methods　according　to　their　short　circuit　characteristics　of　the　devices.　©　2021　IEEE.