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Abstract：
Wide bandgap (WBG) devices are widely used in power electronics. However, it brings electromagnetic interference (EMI) problems. To compare the EMI generated by wide bandgap (WBG) devices and Si counterparts, a datasheet-based method predicting the EMI of different devices is proposed here. What＇s more, a parameter n is defined to analyze and compare the EMI of Si, SiC and GaN on high-frequency. The result reveals that the larger n is, the more serious effect of it on EMI. The DPT experiments were carried out, which verified the accuracy of the above analysis. © 2021 IEEE.
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Year： 2021
Page： 123-126
Language： English
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ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 8
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