4H　Silicon　carbide　(4H-SiC)　is　one　of　the　most　promising　materials　for　pressure　sensing　in　harsh　environments.　Due　to　the　low　efficiency　and　high　energy　consumption　of　dry　etching　process,　mass　manufacturing　of　SiC　pressure　sensors　has　always　been　a　challenging　problem.　A　Yb:KGW　femtosecond　laser　was　used　to　perform　the　circular　diaphragms　of　bulk　4H-SiC　by　parallel　straight　line　scanning.　Small　dimension　errors　and　low　surface　roughness　in　rapid　etching　process　were　measured.　This　indicates　the　potential　of　utilising　the　femtosecond　laser　scanning　approach　to　mass-fabricate　bulk　SiC　sensor　chips　for　pressure　sensing.