A　piezoresistive　pressure　sensor　based　on　4H-SiC　was　developed　for　working　over　500　degrees　C.　The　designed　pressure　range　is　0-7MPa　for　special　aviation　applications.　As　demonstrated　with　experimental　results,　in　this　pressure　range,　the　sensor　shows　excellent　accuracy　and　repeatability　from　30　degrees　C　to　500　degrees　C.　Compared　with　previous　studies,　in　MEMS　processing　of　the　sensor　chip,　a　suitable　alloy　system　was　determined　to　form　a　stable　high-temperature　ohmic　contact.　Besides,　the　chip　was　packaged　with　mechanical　structure　and　ceramic　glue　of　similar　thermal　expansion　coefficient　to　avoid　thermal　stress　induced　when　increasing　temperature.　With　the　above　measures　taken,　the　sensor　performance　can　be　significantly　improved.　The　design,　fabrication,　and　package　of　this　sensor　provide　support　for　high-temperature　use.　Additionally,　this　work　can　be　a　reference　for　future　research　in　this　field.