Traditionally,　preparing　p-type　(Bi,Sb)2Te3　based　materials　by　the　combination　of　ball　milling　and　hot　pressing　is　regarded　effective　to　reduce　the　lattice　thermal　conductivity　and　obtain　high　zT　value.　However,　the　deteriorated　electrical　transport　properties　and　poor　reproducibility　restrict　the　further　promotion　of　such　technology.　In　this　work,　we　prepare　Bi0.4Sb1.6Te3　materials　with　Te　self-compensation　method,　which　leads　to　a　high　average　zT　value　of　1.39　from　30　to　200　with　significantly　enhanced　reproducibility.　The　Te　self-compensation　is　found　to　be　effective　in　manipulating　the　Bi(Sb)Te-　and　VTe2+　native　defects　in　Bi0.4Sb1.6Te3　and　thus　suppress　the　＇donor-like＇　effect　caused　by　ball　milling.　The　resulting　enhanced　carrier　concentration　further　brings　about　a　convergence　of　multi-valley　bands,　which　leads　to　an　increase　in　the　density　of　states　(DOS)　near　Fermi　level　and　delays　the　onset　of　bipolar　effect,　in　favor　of　improving　electrical　properties　meanwhile　reducing　the　bipolar　thermal　conductivity.　Moreover,　in　the　melting　process,　the　excess　Te　facilitates　the　formation　of　Te-rich　precipitates　which　remain　in　the　ball-milled　powders　and　then　volatilize　during　the　spark　plasma　sintering　(SPS)　process,　thus　leaving　dispersedly　distributed　submicron　pores　and　concequently　reduced　the　lattice　thermal　conductivity.　Taken　together,　the　peak　zT　value　reaches　1.55　at　100　and　shows　excellent　reproducibility　in　three　repeated　measurements,　which　can　promote　the　widespread　application　of　the　ball-milled　(Bi,Sb)2Te3　based　materials　in　solid-state　refrigeration.　©　2021　Elsevier　B.V.