Press-pack　insulated　gate　bipolar　transistor　(PP　IGBT)　is　the　key　component　in　hybrid　direct　current　circuit　breaker　(DCCB),　due　to　its　fast-breaking　speed　and　large　interruption　capacity.　This　paper　presents　the　transient　behavior　of　PP　IGBT　under　rated　and　fault　current　interruption　conditions.　For　the　purpose　of　evaluation　for　thermal　behavior　of　PP　IGBT,　the　power　losses　under　different　interruption　conditions　are　analyzed,　then　the　cauer　model　and　FEM　model　are　built　based　on　a　4500V/115A　press-pack　IGBT　for　junction　temperature　estimation.　Consequently,　analytical　investigation　in　conjunction　with　cauer　thermal　network　model　and　FEM　simulation　demonstrate　the　thermal　behavior　of　PP　IGBT　under　different　DC　interruption　conditions.　©　2021　IEEE.