Solid-state　circuit　breakers　(SSCBs)　determine　a　unique　pulsed　overcurrent　operating　profile　for　power　semi-conductor　devices.　In　SSCBs,　the　device　pulsed　overcurrent　capability　serves　as　one　of　the　most　critical　parameters,　yet　it　remains　unclear.　This　work　proposed　an　electrical-thermal　modeling　framework　to　explore　the　full　potential　of　device　overcurrent　capability,　considering　device　parasitic,　circuit　stray　components,　and　multilayer　chip　structure.　Peak　temperature　at　local　hotspot　is　used　as　the　criterion　for　device　thermal　runaway.　Similarly-rated　SiC　MOSFET　and　Si　IGBT　are　compared　to　demonstrate　the　difference　between　device　technologies　with　respect　to　circuit　behavior,　power　loss　and　temperature　limit.　Both　devices　are　able　to　turn-off　much　higher　current　than　the　data-sheet　value,　and　SiC　MOSFET　presents　a　higher　overcurrent　capability　than　Si　IGBT.　In　addition,　an　early　saturation　in　SiC　MOSFET　limits　the　actual　pulsed　current　level.　These　findings　provide　critical　understandings　for　device　margin　and　design　space　in　SSCB　applications.　©　2022　IEEE.