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Author:

Niu, Liqun (Niu, Liqun.) | Zhang, Qi (Zhang, Qi.)

Indexed by:

EI SCIE Scopus Engineering Village

Abstract:

The void closure model is urgently needed for the subsequent hot forming process of additive manufacturing (AM) products. The influence of temperature, Lode parameter, and hydrostatic integration (Gm) on void closure was studied by representative volume element (RVE) simulations. The results show that Gm and the Lode parameter significantly influence void closure, and the temperature effect is related to material properties. A new model accounting for Gm and Lode parameter in evaluating void closure was developed using linear regression with an average error of 2.1% in comparison to RVE simulations. X-ray computed tomography (CT) was carried out at different high reductions for the AM cylinder's hot forging experiments. The new and stress-triaxiality-based (STB) models were integrated into the ABAQUS and compared with the CT measurements. Results indicate that the model is more precise than the STB model, suggesting that the model can be appropriately applied to forecast void closure during the hot forging process for AM products. © 2021 The Society of Manufacturing Engineers

Keyword:

3D printers Additives Computerized tomography Forging Hydraulics Integration Volume measurement

Author Community:

  • [ 1 ] [Niu, Liqun]School of Mechanical Engineering, Xi'an Jiaotong University, Xi'an; Shaanxi; 710049, China
  • [ 2 ] [Zhang, Qi]School of Mechanical Engineering, Xi'an Jiaotong University, Xi'an; Shaanxi; 710049, China
  • [ 3 ] [Zhang, Qi]National Innovation Institute of Additive Manufacturing, Xi'an; Shaanxi; 710300, China

Reprint Author's Address:

  • Q. Zhang;;School of Mechanical Engineering, Xi'an Jiaotong University, Xi'an, 710049, China;;email: henryzhang@mail.xjtu.edu.cn;;

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Source :

Journal of Manufacturing Processes

ISSN: 1526-6125

Year: 2021

Volume: 73

Page: 235-247

5 . 0 1 0

JCR@2020

ESI Discipline: ENGINEERING;

ESI HC Threshold:30

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 8

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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