Nanolayers　of　ZrO2　and　TiO2　and　their　nanolaminates　were　grown　on　silicon　wafer　by　an　atomic　layer　deposition　process.　Precursors　of　tetralds　(dimethylamido)　zirconium　and　tetrakis　(dimethylarnido)　titanium　were　used　to　deposit　ZrO2　and　TiO2　films　at　different　temperatures,　respectively.　The　XRD　results　show　that　ZrO2　films　began　to　crystallize　at　the　deposition　temperature　of　300　degrees　C,　and　the　cubic　phase　was　first　formed　when　the　thickness　of　the　film　reached　16.5　nm,　and　then　monoclinic　phase　appeared　in　the　film　when　the　thickness　further　increased.　The　as-deposited　TiO2　films　exhibited　anatase　phase　at　the　deposition　temperature　range　of　50-300　degrees　C.　AFM　morphologies　indicate　that　both　ZrO2　and　TiO2　films　were　uniform　and　smooth.　Nanolaminates　of　ZrO2　and　TiO2　were　obtained　by　deposition　of　ZrO2　and　TiO2　layers　at　300　degrees　C　alternatively　with　precise　layer　thickness　control.　The　results　show　that　the　nanolaminates　exhibited　a　giant　dielectric　constant　of　850　at　low　frequency　which　was　much　higher　than　the　individual　dielectric　constants　of　ZrO2　and　TiO2.　The　nanolaminates　of　ZrO2　and　TiO2　with　the　giant　dielectric　constant　have　potential　applications　for　high-k　dielectric　materials.　(C)　2015　Elsevier　Ltd　and　Techna　Group　S.r.l.　All　rights　reserved.