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Author:

Shen, Tianlun (Shen, Tianlun.) | Chen, Tao (Chen, Tao.) | Si, Jinhai (Si, Jinhai.) | Gao, Bo (Gao, Bo.) | Hu, Wenbo (Hu, Wenbo.) | Wang, Hongxing (Wang, Hongxing.) | Hou, Xun (Hou, Xun.)

Indexed by:

SCIE EI Scopus Web of Science

Abstract:

We studied the structural and elemental evolutions during the femtosecond laser percussion drilling of high-aspect-ratio diamond microholes. Microholes 225-mu m-deep having an aspect ratio of 15 were drilled with an exposure time of 100 s and a laser power of 60 mW. It is found that when the specimen was machined by femtosecond laser at low power and short exposure time, the laser-affected zone (LAZ) may be still solid in the interior rather being void, even it reached the bottom of the diamond. A clear crack appeared between the solid portion and pristine diamond. Elemental analysis revealed that oxygen was incorporated into the solid portion of the LAZs, and its atomic percentage reached 6.5% for a laser power of 10 mW at initial position and decreased as the depth increased in the solid portion. The wall of the void contained nearly no oxygen. Furthermore, nanoripples were observed on the sidewall surface of the hole. (C) 2022 Society of Photo-Optical Instrumentation Engineers (SPIE)

Keyword:

diamond femtosecond laser high-aspect-ratio laser-affected zones through holes

Author Community:

  • [ 1 ] [Shen, Tianlun]Xi An Jiao Tong Univ, Sch Elect Sci & Engn, Key Lab Phys Elect & Devices, Minist Educ, Xian, Peoples R China
  • [ 2 ] [Chen, Tao]Xi An Jiao Tong Univ, Sch Elect Sci & Engn, Key Lab Phys Elect & Devices, Minist Educ, Xian, Peoples R China
  • [ 3 ] [Si, Jinhai]Xi An Jiao Tong Univ, Sch Elect Sci & Engn, Key Lab Phys Elect & Devices, Minist Educ, Xian, Peoples R China
  • [ 4 ] [Hu, Wenbo]Xi An Jiao Tong Univ, Sch Elect Sci & Engn, Key Lab Phys Elect & Devices, Minist Educ, Xian, Peoples R China
  • [ 5 ] [Wang, Hongxing]Xi An Jiao Tong Univ, Sch Elect Sci & Engn, Key Lab Phys Elect & Devices, Minist Educ, Xian, Peoples R China
  • [ 6 ] [Hou, Xun]Xi An Jiao Tong Univ, Sch Elect Sci & Engn, Key Lab Phys Elect & Devices, Minist Educ, Xian, Peoples R China
  • [ 7 ] [Shen, Tianlun]Xi An Jiao Tong Univ, Shaanxi Key Lab Informat Photon Tech, Xian, Peoples R China
  • [ 8 ] [Chen, Tao]Xi An Jiao Tong Univ, Shaanxi Key Lab Informat Photon Tech, Xian, Peoples R China
  • [ 9 ] [Si, Jinhai]Xi An Jiao Tong Univ, Shaanxi Key Lab Informat Photon Tech, Xian, Peoples R China
  • [ 10 ] [Hu, Wenbo]Xi An Jiao Tong Univ, Shaanxi Key Lab Informat Photon Tech, Xian, Peoples R China
  • [ 11 ] [Wang, Hongxing]Xi An Jiao Tong Univ, Shaanxi Key Lab Informat Photon Tech, Xian, Peoples R China
  • [ 12 ] [Hou, Xun]Xi An Jiao Tong Univ, Shaanxi Key Lab Informat Photon Tech, Xian, Peoples R China
  • [ 13 ] [Gao, Bo]Xian Univ Technol, Dept Elect Engn, Xian, Peoples R China

Reprint Author's Address:

  • T. Chen;;Xi'an Jiaotong University, School of Electronic Science and Engineering, Key Laboratory for Physical Electronics and Devices, The Ministry of Education, Shaanxi Key Lab of Information Photonic Technique, Xi'an, China;;email: Tchen@mail.xjtu.edu.cn;;

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Source :

OPTICAL ENGINEERING

ISSN: 0091-3286

Year: 2022

Issue: 1

Volume: 61

1 . 0 8 4

JCR@2020

ESI Discipline: ENGINEERING;

ESI HC Threshold:7

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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