By　using　800-nm　femtosecond　laser　irradiation　and　chemical　selective　etching,　through　holes　were　fabricated　in　a　350-pm　silicon　carbide　sample.　The　morphology　and　chemical　compositions　of　the　through　holes　were　characterized　using　scanning　electronic　microscopy　equipped　with　an　energy　dispersive　X-ray　spectroscopy.　The　formation　mechanism　of　the　holes　was　attributed　to　the　chemical　reactions　of　laser　affected　zones　with　mixed　solution　of　hydrofluoric　acid　and　nitric　acid.　Results　showed　that　chemical　compositions　of　the　area　around　the　holes　were　silicon　and　carbon　which　were　the　same　as　those　of　the　original　one.　Furthermore,　the　influences　of　number　of　pulses　and　pulse　energy　on　the　depth　and　diameter　of　the　holes　were　investigated.　(C)　2013　Elsevier　B.V.　All　rights　reserved.