Tip-Induced In-Plane Ferroelectric Superstructure in Zigzag-Wrinkled BaTiO3Thin Films - Details

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Abstract：

The　complex　micro-/nanoscale　wrinkle　morphology　primarily　fabricated　by　elastic　polymers　is　usually　designed　to　realize　unique　functionalities　in　physiological,　biochemical,　bioelectric,　and　optoelectronic　systems.　In　this　work,　we　fabricated　inorganic　freestanding　BaTiO3ferroelectric　thin　films　with　zigzag　wrinkle　morphology　and　successfully　modulated　the　ferroelectric　domains　to　form　an　in-plane　(IP)　superstructure　with　periodic　surface　charge　distribution.　Our　piezoresponse　force　microscopy　(PFM)　measurements　and　phase-field　simulation　demonstrate　that　the　self-organized　strain/stress　field　in　the　zigzag-wrinkled　BaTiO3film　generates　a　corresponding　pristine　domain　structure.　These　domains　can　be　switched　by　tip-induced　strain　gradient　(flexoelectricity)　and　naturally　form　a　robust　and　unique　＇braided＇　in-plane　domain　pattern,　which　enables　us　to　offer　an　effective　and　convenient　way　to　create　a　microscopic　ferroelectric　superstructure.　The　corresponding　periodic　surface　potential　distribution　provides　an　extra　degree　of　freedom　in　addition　to　the　morphology　that　could　regulate　cells　or　polar　molecules　in　physiological　and　bioelectric　applications.　©　2022　American　Chemical　Society.　All　rights　reserved.

Keyword：

Barium titanate Crystallography Degrees of freedom (mechanics) Ferroelectric films Ferroelectricity Morphology Optoelectronic devices Physiology Piezoelectricity Scanning probe microscopy Thin films

Author Community：

[ 1 ] [Zhou, Yuqing]Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, xi'An Jiaotong University, Xi'an; 710049, China
[ 2 ] [Guo, Changqing]Sch. of Mat. Science and Engineering and Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing; 100081, China
[ 3 ] [Dong, Guohua]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic Science and Engineering, xi'An Jiaotong University, Xi'an; 710049, China
[ 4 ] [Liu, Haixia]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic Science and Engineering, xi'An Jiaotong University, Xi'an; 710049, China
[ 5 ] [Zhou, Ziyao]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic Science and Engineering, xi'An Jiaotong University, Xi'an; 710049, China
[ 6 ] [Niu, Ben]National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Jiangsu Key Laboratory for Artificial Functional Materials, Nanjing University, Nanjing; 210093, China
[ 7 ] [Wu, Di]National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Jiangsu Key Laboratory for Artificial Functional Materials, Nanjing University, Nanjing; 210093, China
[ 8 ] [Li, Tao]Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, xi'An Jiaotong University, Xi'an; 710049, China
[ 9 ] [Huang, Houbing]Sch. of Mat. Science and Engineering and Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing; 100081, China
[ 10 ] [Liu, Ming]Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic Science and Engineering, xi'An Jiaotong University, Xi'an; 710049, China
[ 11 ] [Min, Tai]Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, xi'An Jiaotong University, Xi'an; 710049, China

Reprint Author's Address：

M. Liu;;Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic Science and Engineering, xi'An Jiaotong University, Xi'an, 710049, China;;email: mingliu@xjtu.edu.cn;;

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Related Keywords：

Toward van der Waals epitaxy of transferable ferroelectric barium titanate films: Via a graphene monolayer
2020，Journal of Materials Chemistry C
Polarization behavior of‘ lead-free 0.94(Bi0.5Na0.5)TiO3-0.06BaTiO3 thin films with enhanced ferroelectric properties
2020，Journal of the European Ceramic Society
Dead layer effect and its elimination in ferroelectric thin film with oxide electrodes
2017，14th International Conference on Fracture, ICF 2017
Intrinsic flexoelectricity of van der Waals epitaxial thin films
2022，Physical Review B

Source ：

Nano Letters

ISSN： 1530-6984

Year： 2022

Issue： 7

Volume： 22

Page： 2859-2866

1 1 . 1 8 9

JCR@2020

ESI Discipline： PHYSICS;

ESI HC Threshold：6

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 17

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 3

Affiliated Colleges：

电子与信息工程学部（原电子与信息工程学院）精细功能电子材料与器件国家专项实验室

国家重点实验室金属材料强度国家重点实验室

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