Indexed by：
Abstract：
In this paper, the switching oscillations of GaN power devices can be predicted accurately by Ansys Q3D high frequency parameter simulation. A ringing optimization method for GaN-Based Driving Circuit is proved to be feasible on the half-bridge standard boards with high switching frequency and low input voltage. And will be used for high frequency hard switching scenarios. © 2021 IEEE.
Keyword：
Reprint Author's Address：
Email：
Source ：
Year： 2021
Language： English
Cited Count：
SCOPUS Cited Count： 1
ESI Highly Cited Papers on the List： 0 Unfold All
WanFang Cited Count：
Chinese Cited Count：
30 Days PV： 12
Affiliated Colleges：
