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Author:

Yu, Longyang (Yu, Longyang.) | Mu, Wei (Mu, Wei.) | Yang, Chengzi (Yang, Chengzi.) | Zhu, Lei (Zhu, Lei.) | Qi, Zhiyuan (Qi, Zhiyuan.) | Wang, Laili (Wang, Laili.) | Yao, Yilong (Yao, Yilong.) | Su, Yuquan (Su, Yuquan.) | Zhang, Chi (Zhang, Chi.)

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Abstract:

The emerging gallium nitride-based semiconductor device due to lower switching loss and smaller package size enables multi-phase point-of-load (POL) converters toward higher power density and efficiency in data centers. The discrete inductors occupy a large proportion of the size and are a bottleneck for further increasing power density. Inverse coupled inductor technology is a promising solution for core size reduction for multi-phase interleaving POL converters. In this paper, a novel magnetic core structure of fully symmetric four-phase inverse coupled inductors are presented, which overcomes the limitation of asymmetrical inductor parameters. The proposed magnetic core structure has the advantages of larger inductance value, smaller size and fully symmetric inductor parameters. A comprehensive analysis of basic magnetic circuit model, derivation of inductance value and design of magnetic core by Maxwell 3-D are discussed. A 108W, 12-1.8V, GaN-based prototype of four-phase interleaving POL converter utilizing the proposed magnetic core is built and tested. The experimental results demonstrate that the converter has lower output current ripples and symmetrical inductor current waveforms. © 2021 IEEE.

Keyword:

Electric inductors Gallium nitride III-V semiconductors Inductance Magnetic circuits Magnetic cores Power converters Structural design Wide band gap semiconductors

Author Community:

  • [ 1 ] [Yu, Longyang]Xi'an Jiaotong University, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an, China
  • [ 2 ] [Mu, Wei]Xi'an Jiaotong University, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an, China
  • [ 3 ] [Yang, Chengzi]Xi'an Jiaotong University, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an, China
  • [ 4 ] [Zhu, Lei]Xi'an Jiaotong University, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an, China
  • [ 5 ] [Qi, Zhiyuan]Xi'an Jiaotong University, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an, China
  • [ 6 ] [Wang, Laili]Xi'an Jiaotong University, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an, China
  • [ 7 ] [Yao, Yilong]Xi'an Jiaotong University, State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an, China
  • [ 8 ] [Su, Yuquan]MiSiliconn Semiconductor Technologies Co. Ltd, Chongqing, China
  • [ 9 ] [Zhang, Chi]MiSiliconn Semiconductor Technologies Co. Ltd, Chongqing, China

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Year: 2021

Page: 5453-5458

Language: English

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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