Ultra-fast　High-power　Pulse　Technology　UHPT　is　a　technology　that　converts　or　releases　electromagnetic　energy　to　specific　loads　in　nanoseconds　or　even　sub-nanoseconds　to　form　ultra-high-power　pulses.　When　the　input　energy　is　constant　the　shorter　the　output　time　compression　the　higher　the　pulse　power　obtained.　It　has　a　very　broad　application　in　biomedical　food　processing　air　purification　material　modification　high-power　microwave　ultra-broad　spectrum　and　other　fields.　Common　techniques　that　can　be　used　to　generate　high-power　pulses　include　1　Spark-gap　SG　2　Nonlinear　Transmission　Lines　NLTLs　3　Magnetic　Pulse　Compressor　System　MPC　4　Semiconductor　Solid　State　Switch　Wait.　Although　high-voltage　SG　can　achieve　high-power　nanosecond　or　even　sub-nanosecond　pulses　it　is　limited　by　factors　such　as　short　lifetime　low　repetition　frequency　and　high　jitter　and　short　lifetime　will　bring　high　cost　consumption　in　practical　applications.　Compared　with　Si　materials　wide　bandgap　semiconductor　SiC　has　a　wide　bandgap　high　thermal　conductivity　and　relatively　mature　wafer　technology　which　makes　it　very　important　in　high　temperature　and　high　power　fields.　The　only　group　IV-IV　compound　semiconductor　containing　Si　element　has　better　compatibility　with　traditional　Si　process　which　can　reduce　the　research　and　development　cycle　and　cost　and　lay　a　solid　foundation　for　the　industrial　application　of　the　device.　The　research　on　DSRD　devices　in　Russia　Germany　and　Japan　is　leading　the　world.　The　voltage　rise　rate　of　SiC　DSRD　devices　developed　by　them　can　reach　2~3　V/ps　which　is　much　higher　than　that　of　Si　DSRD　0.8~1　V/ps　but　has　yet　to　reach　its　theoretical　valuation.　However　domestic　Si-based　DSRD　devices　can　achieve　high-voltage　pulses　of　tens　of　kV　but　there　are　not　many　researches　on　SiC-based　DSRD　devices　which　is　extremely　unfavorable　for　the　realization　and　application　of　ultra-fast　pulses　in　China.　Therefore　it　is　necessary　to　speed　up　the　development　and　application　of　SiC　DSRD　devices.　This　topic　is　based　on　SiC　materials　to　explore　the　characteristics　and　processes　of　DSRD　devices.　Drift　Step　Recovery　Diode　DSRD　has　the　advantages　of　high　power　high　repetition　frequency　and　low　jitter　so　it　has　great　potential　in　the　field　of　ultrafast　high　power　pulse　technology.　SiC　has　the　characteristics　of　wide　band　gap　high　thermal　conductivity　and　high　critical　breakdown　field　strength　which　can　meet　the　commercial　applications　in　high　temperature　high　frequency　and　high　power　fields　and　is　the　best　choice　for　the　preparation　of　new　drift　step　recovery　diode　materials.　Domestic　research　on　SiC　drift　step　recovery　diodes　is　difficult　to　meet　the　high-frequency　and　high-power　requirements　of　ultra-fast　high-power　pulse　switching.　In　this　paper　a　SiC　DSRD　device　is　designed　its　working　circuit　is　optimized　and　the　SiC　reactive　ion　etching　process　and　n-type　ohmic　contact　process　are　studied.　The　main　contents　are　as　follows　In　order　to　meet　the　different　application　requirements　of　the　device　the　corresponding　physical　model　is　established　and　two　SiC　DSRD　devices　are　simulated　and　designed.　One　is　a　high-voltage　SiC　DSRD　with　a　base　doping　concentration　of　5×1015　cm-3　and　a　thickness　of　18μm　a　single-chip　withstand　voltage　of　over　1　800　V　and　a　switching　time　of　about　500　ps　the　other　is　a　low-voltage　SiC　DSRD　with　a　base　thickness　of　0.5　μm　a　doping　concentration　of　1×1016　cm-3　and　a　single-chip　withstand　voltage　of　over　53　V.　The　research　on　high-voltage　SiC　DSRD　finds　that　its　forward　conduction　current　is　negatively　correlated　with　the　change　of　device　operating　temperature　the　low-voltage　SiC　DSRD　device　have　the　largest　forward　conduction　current　at　400　K.　At　the　same　time　based　on　the　equivalent　models　of　SiC　DSRD　devices　with　different　withstand　voltages　the　circuit　parameters　are　optimized　and　the　high-voltage　2.2　kV　pulse　of　8.8　kW　and　the　switching　time　of　about　500　ps　and　the　ultra-fast　pulse　of　0.11　kW　and　the　switching　time　of　about　60　ps　are　respectively　realized　at　the　load　side.　©　2022　Chinese　Optical　Society.　All　rights　reserved.