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Author:

Yang, Aijun (Yang, Aijun.) | Gao, Jian (Gao, Jian.) | Li, Baichang (Li, Baichang.) | Tan, Jiawei (Tan, Jiawei.) | Xiang, Yu (Xiang, Yu.) | Gupta, Tushar (Gupta, Tushar.) | Li, Lu (Li, Lu.) | Suresh, Shravan (Suresh, Shravan.) | Idrobo, Juan Carlos (Idrobo, Juan Carlos.) | Lu, Toh-Ming (Lu, Toh-Ming.) | Rong, Mingzhe (Rong, Mingzhe.) (Scholars:荣命哲) | Koratkar, Nikhil (Koratkar, Nikhil.)

Indexed by:

SCIE EI Scopus

Abstract:

We report a novel humidity sensor featuring vertically oriented arrays of ReS2 nanosheets grown on an interdigitated gold electrode by chemical vapor deposition. The vertical orientation of the nanosheets is important since it maximizes the exposed surface area for water adsorption/desorption. We find that the resistance of the ReS2 film decreases sensitively with increasing relative humidity, which we attribute to charge transfer from the absorbed H2O molecules to the n-doped ReS2 nanosheets. In addition to high sensitivity, the ReS2 sensors exhibit fast response/recovery time and excellent reversibility with minimal hysteresis. Moreover, our fabrication approach involving the direct ( 1-step) growth of the ReS2 films on an interdigitated electrode ( without any transfer using wet chemistry or lithography) greatly simplifies the device architecture and has important practical benefits for the low-cost and scalable deployment of such sensor devices.

Keyword:

chemical vapor deposition humidity sensing hysteresis ReS2 nanosheets sensitivity

Author Community:

  • [ 1 ] [Yang, Aijun; Gao, Jian; Li, Baichang; Tan, Jiawei; Koratkar, Nikhil] Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA
  • [ 2 ] [Yang, Aijun; Rong, Mingzhe] Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China
  • [ 3 ] [Xiang, Yu; Lu, Toh-Ming] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
  • [ 4 ] [Gupta, Tushar; Li, Lu; Suresh, Shravan; Koratkar, Nikhil] Rensselaer Polytech Inst, Dept Mech Engn, Troy, NY 12180 USA
  • [ 5 ] [Idrobo, Juan Carlos] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
  • [ 6 ] [Lu, Toh-Ming] Rensselaer Polytech Inst, Ctr Mat Device & Integrated Syst, Troy, NY 12180 USA
  • [ 7 ] [Yang, Aijun]Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA
  • [ 8 ] [Gao, Jian]Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA
  • [ 9 ] [Li, Baichang]Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA
  • [ 10 ] [Tan, Jiawei]Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA
  • [ 11 ] [Koratkar, Nikhil]Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA
  • [ 12 ] [Yang, Aijun]Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China
  • [ 13 ] [Rong, Mingzhe]Xi An Jiao Tong Univ, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China
  • [ 14 ] [Xiang, Yu]Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
  • [ 15 ] [Lu, Toh-Ming]Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA
  • [ 16 ] [Gupta, Tushar]Rensselaer Polytech Inst, Dept Mech Engn, Troy, NY 12180 USA
  • [ 17 ] [Li, Lu]Rensselaer Polytech Inst, Dept Mech Engn, Troy, NY 12180 USA
  • [ 18 ] [Suresh, Shravan]Rensselaer Polytech Inst, Dept Mech Engn, Troy, NY 12180 USA
  • [ 19 ] [Koratkar, Nikhil]Rensselaer Polytech Inst, Dept Mech Engn, Troy, NY 12180 USA
  • [ 20 ] [Idrobo, Juan Carlos]Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
  • [ 21 ] [Lu, Toh-Ming]Rensselaer Polytech Inst, Ctr Mat Device & Integrated Syst, Troy, NY 12180 USA

Reprint Author's Address:

  • Rensselaer Polytech Inst, Dept Mat Sci & Engn, Troy, NY 12180 USA.; Koratkar, N (reprint author), Rensselaer Polytech Inst, Dept Mech Engn, Troy, NY 12180 USA.

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Source :

2D MATERIALS

ISSN: 2053-1583

Year: 2016

Issue: 4

Volume: 3

6 . 9 3 7

JCR@2016

7 . 1 0 3

JCR@2020

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:239

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 39

SCOPUS Cited Count: 50

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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