In　this　paper,　the　low　temperature　direct　wafer-bonding　technique　under　350　C　is　used　to　fabricate　the　capacitive　micromachined　ultrasonic　transducers　(CMUTs)　and　the　first　illustration　of　CMUTs　with　a　15　x　15　array　is　obtained.　In　comparison　with　other　wafer-bonding　technology　under　high　temperature　beyond　400　degrees　C,　the　thermal　stress　and　thermal　deformation　of　CMUTs　produced　in　the　wafer-bonding　process　can　be　decreased　largely　because　of　low　bonding　temperature.　What＇s　more,　the　low　temperature　direct　wafer-bonding　technique　is　beneficial　to　combine　the　CMUTs　chip　with　integrated　circuits　(ICs)　as　well　as　reduce　the　parasitic　capacitance.　Based　on　the　low　temperature　direct　wafer-bonding　process,　a　silicon-on-insulator　(SOI)　wafer　with　the　silicon　device　layer　used　for　transducer　membrane　and　a　low-resistivity　silicon　substrate　with　the　structured　SiO2　layer　are　bonded　to　fabricate　the　main　structure　of　CMUTs.　Therefore,　the　parasitic　capacitance　of　CMUTs　can　be　further　reduced　since　there　is　no　metal　auxiliary　layer　existing　during　the　bonding　process.　The　structure　morphology　and　electrical　characterization　of　fabricated　CMUTs　are　tested　in　this　paper.　Then,　the　impedance-frequency　curve　and　the　corresponding　phase-frequency　curve　of　the　CMUTs　are　obtained　perfectly,　which　demonstrate　that　the　fabricated　CMUTs　based　on　the　low-temperature　direct　wafer-bonding　technique　present　the　fine　mechanical　and　electrical　characteristics.　(C)　2017　Elsevier　B.V.　All　rights　reserved.