Fabrication　of　dual-termination　Schottky　barrier　diode　(SBDDT)　by　using　oxygen-/fluorine-terminated　diamond　(OT-/FT-diamond)　has　been　carried　out　on　P-/P　+　diamond.　X-ray　photoelectron　spectroscopy　(XPS)　measurement　was　used　to　determine　the　chemical　composition　of　OT-/FT-diamond　surface　treated　by　ultraviolet　ozone　and　C4F8　plasma,　respectively.　The　barrier　heights　of　Au　on　OT-/FT-diamond　were　calculated　to　be　2.0　+/-　0.12　and　2.39　+/-　0.12　eV,　respectively.　Au　film　was　patterned　on　the　OT-/FT-diamond　as　the　schottky　electrode,　and　Ti/Au　film　were　deposited　on　the　backside　of　substrate　as　ohmic　electrode,　then　a　SBDDT　was　achieved　completely.　SBDDT　exhibits　better　forward　and　reverse　I-V　characteristics　based　on　the　optimum　OT-/FT-diamond　(W-O/W-F)　area　ratio　0.2,　which　illustrates　that　the　combination　of　dual　surface　termination　is　an　efficient　way　to　optimize　the　performance　of　diamond　SBD.