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Author:

Du, Xianfeng (Du, Xianfeng.) | Men, Kai (Men, Kai.) | Xu, Youlong (Xu, Youlong.) | Li, Bing (Li, Bing.) | Yang, Zhuo (Yang, Zhuo.) | Liu, Zihan (Liu, Zihan.) | Li, Long (Li, Long.) | Li, Liang (Li, Liang.) | Feng, Tianyu (Feng, Tianyu.) | Rehman, Wasif ur (Rehman, Wasif ur.) | Ullah, Inam (Ullah, Inam.) | Mao, Shengchun (Mao, Shengchun.)

Indexed by:

SCIE PubMed EI Scopus

Abstract:

Titanium dioxide (TiO2) is usually introduced into dielectric layer of aluminum electrolytic capacitor to enhance capacitance performance via forming Al2O3-TiO2 composite film. However, there is a big obstacle caused by high crystallization temperature of TiO2 to capacitance enhancement. In present work, a facile route was proposed to synthesize crystalline TiO2 with the size of 3-10 nm at room temperature using lactic acid (LA) and acetylacetone (Acac) as double chelators. After being introduced into the surface of etched aluminum foils as dielectric layer, TiO2 boosted the specific capacitance by about 24% compared to that without TiO2, and about 11% compared to that with TiO2 using lactic acid as only chelator. (C) 2015 Published by Elsevier Inc.

Keyword:

Aluminum electrolytic capacitor Capacitance performance Double chelators Sol-gel Titanium oxide

Author Community:

  • [ 1 ] [Xu, Youlong] Xi An Jiao Tong Univ, Minist Educ, Key Lab, Elect Mat Res Lab, Xian 710049, Peoples R China
  • [ 2 ] [Xu, Youlong] Xi An Jiao Tong Univ, Int Ctr Dielectr Res, Xian 710049, Peoples R China
  • [ 3 ] [Xu, Youlong]Xi An Jiao Tong Univ, Minist Educ, Key Lab, Elect Mat Res Lab, Xian 710049, Peoples R China
  • [ 4 ] [Xu, Youlong]Xi An Jiao Tong Univ, Int Ctr Dielectr Res, Xian 710049, Peoples R China

Reprint Author's Address:

  • Xi An Jiao Tong Univ, Minist Educ, Key Lab, Elect Mat Res Lab, Xian 710049, Peoples R China.

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Source :

JOURNAL OF COLLOID AND INTERFACE SCIENCE

ISSN: 0021-9797

Year: 2015

Volume: 443

Page: 170-176

3 . 7 8 2

JCR@2015

8 . 1 2 8

JCR@2020

ESI Discipline: CHEMISTRY;

ESI HC Threshold:208

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 12

SCOPUS Cited Count: 16

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 8

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