©　2018　Society　of　Thermal　Engineers　of　Serbia.　This　paper　addresses　the　complex　component　evolution　and　silicon　dynamic　deposition　characteristics　in　the　traditional　Siemens　reactor.　A　two-dimensional　heat　and　mass　transfer　model　coupled　with　a　detailed　chemical　reaction　mechanism　was　developed.　The　distributions　of　temperature,　velocity,　and　concentration　are　presented　in　detail.　The　influencing　factors　(such　as　feeding　mole　ratio,　inlet　velocity,　base　temperature　and　reactor　pressure)　on　the　molar　concentration　evolutions　of　ten　major　components　and　silicon　growth　rate　were　obtained　and　analyzed.　Results　show　that　base　temperature　is　main　influence　of　HCl　mole　fraction.　In　order　to　get　more　growth　rate　of　silicon　and　better　silicon　quality,　the　complex　operating　parameters　need　to　be　reasonably　designed　on　collaborative　optimization.