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Abstract：
As typical wide-bandgap semiconductors, GaN-on-Si devices show many advantages compared with conventional Si-based devices. In this paper, a comprehensive review and discussion of the GaN-on-Si devices for the power electronics applications are conducted, including the electric vehicles (EVs), PV generating system, and Microgrid. Main design challenges are discussed with solutions. For these applications, main experimental results are presented to show the advantages of GaN-on-Si devices in different aspects. © 2018 IEEE.
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Year： 2018
Language： English
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WoS CC Cited Count： 0
SCOPUS Cited Count： 4
ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 4
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