Silicon　carbide　(SiC)　metal-oxide-semiconductor　field-effect　transistor　(MOSFET)　present　good　features　on　its　switching　speed,　operation　voltage　and　will　future　improve　the　performance　of　power　electronic　devices　in　medium　and　high　power.　However,　it　also　puts　forward　new　requirements　for　voltage　measurement,　which　is　high　bandwidth　under　high　voltage　conditions.　This　paper　proposes　a　high　voltage　and　high　bandwidth　voltage　sensing　circuit　that　uses　the　characteristics　of　the　same　resistor　with　the　same　parasitic　capacitance　to　meet　the　high　frequency　constraint　of　voltage　sensing　circuit.　By　using　the　proposed　circuit　in　conjunction　with　an　appropriate　load　compensation　method,　the　withstand　voltage　rating　of　low-voltage　and　high-bandwidth　passive　probes　can　be　extended　to　required　levels.　The　performance　of　the　voltage　measurement　is　experimentally　verified　and　compared.　©　2020　IEEE.