Silicon　carbide　is　widely　used　in　radiation　environments　due　to　its　excellent　properties.　However,　when　exposed　to　the　strong　radiation　environment　constantly,　plenty　of　defects　are　generated,　thus　causing　the　material　performance　downgrades　or　failures.　In　this　paper,　the　two-temperature　model　(2T-MD)　is　used　to　explore　the　defect　recovery　process　by　applying　the　electronic　energy　loss　(Se)　on　the　pre-damaged　system.　The　effects　of　defect　concentration　and　the　applied　electronic　energy　loss　on　the　defect　recov-ery　process　are　investigated,　respectively.　The　results　demonstrate　that　almost　no　defect　recovery　takes　place　until　the　defect　density　in　the　damage　region　or　the　local　defect　density　is　large　enough,　and　the　probability　of　defect　recovery　increases　with　the　defect　concentration.　Additionally,　the　results　indicate　that　the　defect　recovery　induced　by　swift　heavy　ions　is　mainly　connected　with　the　homogeneous　recombination　of　the　carbon　defects,　while　the　probability　of　heterogeneous　recombination　is　mainly　dependent　on　the　silicon　defects.　(c)　2021　Korean　Nuclear　Society,　Published　by　Elsevier　Korea　LLC.　This　is　an　open　access　article　under　the　CC　BY-NC-ND　license　(http://creativecommons.org/licenses/by-nc-nd/4.0/).