For　high-energy　single　ion　events,　the　relationship　between　electronic　energy　loss　mechanism　and　atomic　processes　is　generally　described　by　the　inelastic　thermal　spike　model.　However,　the　parameters　required　for　the　model　are　not　accurately　known　and　are　often　estimated　from　a　free　electron　gas　model.　To　ensure　this　model　is　more　reliable　and　predictive,　a　more　accurate　calculation　for　the　parameters　should　be　taken.　In　this　paper,　the　temperature　dependence　of　the　electronic　heat　capacity　and　electron-phonon　coupling　factor　(e-ph)　has　been　calculated,　using　density　functional　theory　(DFT).　The　calculation　results　demonstrate　that　the　effect　of　electron　thermal　excitation　on　the　thermodynamic　parameters　is　sensitive　to　the　bandgap,　and　these　parameters　vary　immensely　with　the　electron　temperature.　Besides,　to　verify　the　accuracy　of　obtained　parameters,　both　the　swift　heavy　ions　(SHI)　irradiation　in　crystalline　6H-SiC　and　amorphous　6H-SiC　are　simulated,　using　the　inelastic　thermal　spike　model.　And　the　results　are　more　consistent　with　the　experiment　conclusion,　for　the　obtained　parameters　by　DFT.　Hence,　the　calculated　temperature-dependent　parameters　are　more　suitable　for　the　inelastic　thermal　spike　model.