Wide-bandgap　(WBG)　semiconductors　devices　such　as　silicon　carbide　(SiC)　metal-oxide-semiconductor　field-effect　transistor　(MOSFET)　can　handle　much　higher　voltage　and　current　in　a　relatively　small　die　size　than　their　Si　counterpart.　However,　the　shrinkage　in　die　size　poses　new　challenges　to　the　thermal　management　systems　for　SiC　MOSFET　power　modules.　As　a　two-phase　cooling　component,　vapor　chamber　(VC),　has　extremely　high　thermal　conductivity　with　benefits　including　light　weight,　low　cost　and　uniform　temperature　distribution,　making　it　promising　in　SiC　power　module　packaging.　This　paper　proposes　a　new　packaging　design　in　which　SiC　bare　dies　are　directly　integrated　on　the　top　of　vapor　chambers.　In　this　design,　the　vapor　chamber　not　only　is　a　heat　spreader,　but　also　conducts　the　drain　current　of　SiC　MOSFETs.　The　VCs　in　this　study　are　optimized　to　improve　the　thermal　performance　and　reduce　the　thermal　stress　in　the　die　solder　layer.　SiC　power　module　prototypes　directly　integrated　with　VCs　are　built　using　a　new　fabrication　process.　The　modules　integrated　with　VCs　can　operate　under　200　W　of　power　dissipation　per　die　(632　W/cm　2　)　without　exceeding　the　maximum　rated　junction　temperature.　This　paper　reveals　the　potential　of　directly　integrating　phase　change　cooling　components　inside　power　modules,　providing　a　new　solution　to　improve　the　thermal　performance　and　reliability　of　SiC　power　modules　without　adding　complexity　and　energy　consumptions　to　external　cooling　systems.　©　2021　IEEE.