Due　to　the　outstanding　material　properties,　silicon　carbide　(SiC)　power　device　is　the　most　promising　alternative　to　silicon　devices　and　can　work　at　higher　junction　temperature.　However,　existing　packaging　technologies　obstruct　the　use　of　SiC　devices　at　high　temperature　and　impede　the　continued　exploration　of　SiC　devices　in　high-temperature　applications.　This　article　proposes　a　novel　hermetic　metal　packaging　method　called　compact-interleaved　package.　The　compact-interleaved　power　module　handles　the　mentioned　problems　from　three　key　considerations:　packaging　parasitic　parameters,　direct　electrode　measurement　structure,　and　packaging　materials.　Based　on　the　elaborate　high-temperature　double　pulse　test　platform,　dynamic　characteristics　of　1.2-kV/13-mΩ　4H-SiC　power　mosfet　are　studied　under　the　condition　of　extremely　high　junction　temperature　(up　to　550　°C)　and　extremely　high　switching　speed　(about　3　kA/μs).　The　dynamic　characteristics　of　SiC　mosfet　are　theoretically　analyzed　and　verified　by　experimental　measurements.　Compared　with　other　SiC　bipolar　devices,　SiC　mosfet　maintains　outstanding　dynamic　characteristics　at　extremely　high　temperatures　and　has　an　optimal　operating　high-temperature　range.　Finally,　this　article　demonstrates　an　extreme-high-temperature　power　electronic　converter　to　verify　the　superiority　of　the　packaging　method,　and　also　proves　the　extreme-high-temperature　power　converting　capability　of　SiC　mosfet.　©　1986-2012　IEEE.